Authors:
Kalganov, VD
Mileshkina, NV
Moskardini, AO
Sapronov, SA
Citation: Vd. Kalganov et al., Manifestation of surface electron states in the energy distribution of electrons under the field emission from p-type germanium, J COMMUN T, 45(6), 2000, pp. 690-694
Citation: Vd. Kalganov et Nv. Mileshkina, Field-emission spectroscopy of an n-GaAs single crystal with an oxidized surface, J COMMUN T, 45(12), 2000, pp. 1347-1351
Authors:
Rogachev, AA
Kalganov, VD
Mileshkina, NV
Ostroumova, EV
Citation: Aa. Rogachev et al., The influence of strong electric field on the interface in the Al-SiO2-n-Si Auger transistor, MICROELEC J, 31(11-12), 2000, pp. 905-911
Citation: Vd. Kalganov et Nv. Mileshkina, Experimental study of high-field charge transport characteristics in n-GaAs emitters, PHYS LOW-D, 12, 1999, pp. 23-32