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Citation: Ff. Komarov et al., Formation of device isolation in GaAs with polyenergetic ion implantation, VACUUM, 63(4), 2001, pp. 577-579

Authors: Komarov, FF Komarov, AF Mironov, AM

Citation: Ff. Komarov et al., Influence of initial charge and charge state fluctuations on high-energy ion ranges and track formation, NUCL INST B, 148(1-4), 1999, pp. 159-163

Authors: Komarov, FF Kamyshan, AS Mironov, AM

Citation: Ff. Komarov et al., Formation of horizontal and vertical insulation in semiconductors by ion implantation, NUKLEONIKA, 44(2), 1999, pp. 201-206