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Results:
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Results: 15
Authors:
Wang, TR
Moll, N
Cho, KJ
Joannopoulos, JD
Citation: Tr. Wang et al., Computational design of compounds for monolithic integration in optoelectronics - art. no. 035306, PHYS REV B, 6303(3), 2001, pp. 5306
Authors:
Fink, V
Chevalier, E
Pitts, OJ
Dvorak, MW
Kavanagh, KL
Bolognesi, CR
Watkins, SP
Hummel, S
Moll, N
Citation: V. Fink et al., Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb, APPL PHYS L, 79(15), 2001, pp. 2384-2386
Authors:
Bahl, SR
Moll, N
Robbins, VM
Kuo, HC
Moser, BG
Stillman, GE
Citation: Sr. Bahl et al., Be diffusion in InGaAs/InP heterojunction bipolar transistors, IEEE ELEC D, 21(7), 2000, pp. 332-334
Authors:
Wang, LG
Kratzer, P
Moll, N
Scheffler, M
Citation: Lg. Wang et al., Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate, PHYS REV B, 62(3), 2000, pp. 1897-1904
Authors:
Wakita, A
Rohdin, H
Robbins, V
Moll, N
Su, CY
Nagy, A
Basile, D
Citation: A. Wakita et al., Low-noise bias reliability of AlInAs/GaInAs modulation-doped field effect transistors with linearly graded low-temperature buffer layers grown on GaAs substrates, JPN J A P 1, 38(2B), 1999, pp. 1186-1189
Authors:
Wang, TR
Moll, N
Cho, KJ
Joannopoulos, JD
Citation: Tr. Wang et al., Deliberately designed interfaces for monolithic integration in optoelectronics, J VAC SCI B, 17(4), 1999, pp. 1612-1616
Authors:
Moll, N
Wang, TR
Cho, K
Joannopoulos, JD
Citation: N. Moll et al., Semiconductor alloys for monolithic integration with Si microelectronics, MAT SCI E B, 67(1-2), 1999, pp. 17-22
Authors:
Liu, QKK
Moll, N
Scheffler, M
Pehlke, E
Citation: Qkk. Liu et al., Equilibrium shapes and energies of coherent strained InP islands, PHYS REV B, 60(24), 1999, pp. 17008-17015
Authors:
Mirbt, S
Moll, N
Cho, K
Joannopoulos, JD
Citation: S. Mirbt et al., Cation-rich (100) surface reconstructions of InP and GaP, PHYS REV B, 60(19), 1999, pp. 13283-13286
Authors:
Rohdin, H
Moll, N
Bratkovsky, AM
Su, CY
Citation: H. Rohdin et al., Dispersion and tunneling analysis of the interfacial gate resistance in Schottky barriers, PHYS REV B, 59(20), 1999, pp. 13102-13113
Authors:
Mirbt, S
Moll, N
Kley, A
Joannopoulos, JD
Citation: S. Mirbt et al., A general rule for surface reconstructions of III-V semiconductors, SURF SCI, 422(1-3), 1999, pp. L177-L182
Authors:
Rohdin, H
Wakita, A
Nagy, A
Robbins, V
Moll, N
Su, CY
Citation: H. Rohdin et al., A 0.1-mu m MHEMT millimeter-wave IC technology designed for manufacturability, SOL ST ELEC, 43(8), 1999, pp. 1645-1654
Authors:
Wang, LG
Kratzer, P
Scheffler, M
Moll, N
Citation: Lg. Wang et al., Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy, PHYS REV L, 82(20), 1999, pp. 4042-4045
Authors:
Wang, T
Moll, N
Cho, KJ
Joannopoulos, JD
Citation: T. Wang et al., Deliberately designed materials for optoelectronics applications, PHYS REV L, 82(16), 1999, pp. 3304-3307
Authors:
Gardner, NF
Chui, HC
Chen, EI
Krames, MR
Huang, JW
Kish, FA
Stockman, SA
Kocot, CP
Tan, TS
Moll, N
Citation: Nf. Gardner et al., 1.4x efficiency improvement in transparent-substrate (AlxGa1-x)(0.5)In0.5Plight-emitting diodes with thin (<= 2000 angstrom) active regions, APPL PHYS L, 74(15), 1999, pp. 2230-2232
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1-15
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