Authors:
Masri, P
Moreaud, N
Laridjani, MR
Calas, J
Averous, M
Chaix, G
Dollet, A
Berjoan, R
Dupuy, C
Citation: P. Masri et al., The physics of heteroepitaxy of 3C-SiC on Si: role of Ge in the optimization of the 3C-SiC/Si heterointerface, MAT SCI E B, 61-2, 1999, pp. 535-538