AAAAAA
Results:
1-25
|
Results: 25
Authors:
Tsuchiya, T
Matsuura, T
Murota, J
Citation: T. Tsuchiya et al., Low-frequency noise in Si1-xGex p-channel metal oxide semiconductor field-effect transistors, JPN J A P 1, 40(9A), 2001, pp. 5290-5293
Authors:
Lee, D
Noda, T
Shim, H
Sakuraba, M
Matsuura, T
Murota, J
Citation: D. Lee et al., Phosphorus doping in Si1-x-yGexCy epitaxial growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH3-H-2 gas system, JPN J A P 1, 40(4B), 2001, pp. 2697-2700
Authors:
Nakabayashi, Y
Osman, HI
Segawa, T
Saito, K
Matsumoto, S
Murota, J
Wada, K
Abe, T
Citation: Y. Nakabayashi et al., Self-diffusion in extrinsic silicon using isotopically enriched Si-30 layer, JPN J A P 2, 40(3A), 2001, pp. L181-L182
Authors:
Shimamune, Y
Sakuraba, M
Matsuura, T
Murota, J
Citation: Y. Shimamune et al., Epitaxial growth of heavily P-doped Si films at 450 degrees C by alternately supplied PH3 and SiH4, J PHYS IV, 11(PR3), 2001, pp. 255-260
Authors:
Watanabe, T
Sakuraba, M
Matsuura, T
Murota, J
Citation: T. Watanabe et al., Atomic-order thermal nitridation of Si(100) and subsequent growth of Si, J VAC SCI A, 19(4), 2001, pp. 1907-1911
Authors:
Kanetsuna, T
Matsuura, T
Murota, J
Citation: T. Kanetsuna et al., Surface adsorption and reaction of chlorine on impurity-doped single crystalline Si using electron cyclotron resonance plasma, J ELCHEM SO, 148(8), 2001, pp. G420-G423
Authors:
Nakabayashi, Y
Segawa, T
Osman, HI
Saito, K
Matsumoto, S
Murota, J
Wada, K
Abe, T
Citation: Y. Nakabayashi et al., Epitaxial growth of pure Si-30 layers on a natural Si(100) substrate usingenriched (SiH4)-Si-30, JPN J A P 2, 39(11B), 2000, pp. L1133-L1134
Authors:
Takatsuka, T
Fujiu, M
Sakuraba, M
Matsuura, T
Murota, J
Citation: T. Takatsuka et al., Surface reaction of CH3SiH3 on Ge(100) and Si(100), APPL SURF S, 162, 2000, pp. 156-160
Authors:
Shimamune, Y
Sakuraba, M
Matsuura, T
Murota, J
Citation: Y. Shimamune et al., Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition, APPL SURF S, 162, 2000, pp. 390-394
Authors:
Noda, T
Lee, D
Shim, H
Sakuraba, M
Matsuura, T
Murota, J
Citation: T. Noda et al., Doping and electrical characteristics of in-situ heavily B-doped Si1-x-yGexCy films epitaxially grown using ultraclean LPCVD, THIN SOL FI, 380(1-2), 2000, pp. 57-60
Authors:
Shimamune, Y
Sakuraba, M
Matsuura, T
Murota, J
Citation: Y. Shimamune et al., Atomic-layer doping in Si by alternately supplied PH3 and SiH4, THIN SOL FI, 380(1-2), 2000, pp. 134-136
Authors:
Ichikawa, A
Hirose, Y
Ikeda, T
Noda, T
Fujiu, M
Takatsuka, T
Moriya, A
Sakuraba, M
Matsuura, T
Murota, J
Citation: A. Ichikawa et al., Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction, THIN SOL FI, 369(1-2), 2000, pp. 167-170
Authors:
Kobayashi, S
Aoki, T
Mikoshiba, N
Sakuraba, M
Matsuura, T
Murota, J
Citation: S. Kobayashi et al., Segregation and diffusion of impurities from doped Si1-xGex films into silicon, THIN SOL FI, 369(1-2), 2000, pp. 222-225
Authors:
Tsuchiya, T
Goto, K
Sakuraba, M
Matsuura, T
Murota, J
Citation: T. Tsuchiya et al., Drain leakage current and instability of drain current in Si/Si1-xGex MOSFETs, THIN SOL FI, 369(1-2), 2000, pp. 379-382
Authors:
Han, P
Sakuraba, M
Jeong, YC
Bock, K
Matsuura, T
Murota, J
Citation: P. Han et al., Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(100) grown by low-temperature low-pressure CVD, J CRYST GR, 209(2-3), 2000, pp. 315-320
Authors:
Tashimo, T
Murota, J
Suto, T
Kato, K
Citation: T. Tashimo et al., Physical properties of lime powder produced by powder-particle fluidized bed, J CHEM EN J, 33(3), 2000, pp. 365-371
Authors:
Takeuchi, H
Matsuura, T
Murota, J
Citation: H. Takeuchi et al., Contribution of ions and radicals in etching of Si1-xGex epitaxial films using an electron-cyclotron-resonance chlorine plasma, APPL PHYS L, 77(12), 2000, pp. 1828-1830
Authors:
Seino, T
Matsuura, T
Murota, J
Citation: T. Seino et al., Contribution of radicals and ions in atomic-order plasma nitridation of Si, APPL PHYS L, 76(3), 2000, pp. 342-344
Authors:
Watanabe, T
Sakuraba, M
Matsuura, T
Murota, J
Citation: T. Watanabe et al., Separation between surface adsorption and reaction of NH3 on Si(100) by flash heating, JPN J A P 1, 38(1B), 1999, pp. 515-517
Authors:
Watanabe, T
Sakuraba, M
Matsuura, T
Murota, J
Citation: T. Watanabe et al., Layer-by-layer growth of silicon nitride films by NH3 and SiH4, J PHYS IV, 9(P8), 1999, pp. 333-340
Authors:
Yamamoto, Y
Matsuura, T
Murota, J
Citation: Y. Yamamoto et al., H-termination effects on initial growth characteristics of W on Si using WF6 and SiH4 gases, J PHYS IV, 9(P8), 1999, pp. 431-436
Authors:
Moriya, A
Sakuraba, M
Matsuura, T
Murota, J
Citation: A. Moriya et al., Doping and electrical characteristics of in situ heavily B-doped Si1-xGex films epitaxially grown using ultraclean LPCVD, THIN SOL FI, 344, 1999, pp. 541-544
Authors:
Tashimo, T
Suto, T
Murota, J
Kato, K
Citation: T. Tashimo et al., Calcination of fine limestone particles by a Powder-Particle Fluidized Bed, J CHEM EN J, 32(3), 1999, pp. 374-378
Authors:
Kobayashi, S
Iizuka, M
Aoki, T
Mikoshiba, N
Sakuraba, M
Matsuura, T
Murota, J
Citation: S. Kobayashi et al., Segregation and diffusion of phosphorus from doped Si1-xGex films into silicon, J APPL PHYS, 86(10), 1999, pp. 5480-5483
Authors:
Matsuura, T
Honda, Y
Murota, J
Citation: T. Matsuura et al., Atomic-order layer-by-layer role-share etching of silicon nitride using anelectron cyclotron resonance plasma, APPL PHYS L, 74(23), 1999, pp. 3573-3575
Risultati:
1-25
|