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Results: 1-9 |

Results: 9

SELF-ASSEMBLED INP ISLANDS GROWN ON GAP SUBSTRATE

Authors: NABETANI Y SAWADA K FURUKAWA Y WAKAHARA A NODA S SASAKI A

Citation: Y. Nabetani et al., SELF-ASSEMBLED INP ISLANDS GROWN ON GAP SUBSTRATE, Journal of crystal growth, 193(4), 1998, pp. 470-477

CDSE ZNSE STRAINED-LAYER SUPERLATTICES GROWN ON INP/

Authors: NABETANI Y TAKAHASHI H KATO T MATSUMOTO T

Citation: Y. Nabetani et al., CDSE ZNSE STRAINED-LAYER SUPERLATTICES GROWN ON INP/, Journal of crystal growth, 185, 1998, pp. 26-30

PHOTOLUMINESCENCE PROPERTIES OF ALGAP SUPERLATTICES

Authors: NABETANI Y WAKAHARA A SASAKI A

Citation: Y. Nabetani et al., PHOTOLUMINESCENCE PROPERTIES OF ALGAP SUPERLATTICES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 454-458

ISLAND FORMATION OF INAS GROWN ON GAAS

Authors: NABETANI Y YAMAMOTO N TOKUDA T SASAKI A

Citation: Y. Nabetani et al., ISLAND FORMATION OF INAS GROWN ON GAAS, Journal of crystal growth, 146(1-4), 1995, pp. 363-367

CRITICAL THICKNESS OF INAS GROWN ON MISORIENTED GAAS SUBSTRATES

Authors: NABETANI Y WAKAHARA A SASAKI A

Citation: Y. Nabetani et al., CRITICAL THICKNESS OF INAS GROWN ON MISORIENTED GAAS SUBSTRATES, Journal of applied physics, 78(11), 1995, pp. 6461-6468

MOLECULAR-BEAM EPITAXY OF INAS AND ITS INTERACTION WITH A GAAS OVERLAYER ON VICINAL GAAS (001) SUBSTRATES

Authors: LIN XW LILIENTALWEBER Z WASHBURN J WEBER ER SASAKI A WAKAHARA A NABETANI Y

Citation: Xw. Lin et al., MOLECULAR-BEAM EPITAXY OF INAS AND ITS INTERACTION WITH A GAAS OVERLAYER ON VICINAL GAAS (001) SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2562-2567

PHOTOLUMINESCENCE PROCESS IN ALP GAP SHORT-PERIOD SUPERLATTICES GROWNBY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLPHOSPHINE/

Authors: WAKAHARA A NABETANI Y WANG XL SASAKI A

Citation: A. Wakahara et al., PHOTOLUMINESCENCE PROCESS IN ALP GAP SHORT-PERIOD SUPERLATTICES GROWNBY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLPHOSPHINE/, Journal of crystal growth, 145(1-4), 1994, pp. 187-191

INITIAL GROWTH STAGE AND OPTICAL-PROPERTIES OF A 3-DIMENSIONAL INAS STRUCTURE ON GAAS

Authors: NABETANI Y ISHIKAWA T NODA S SASAKI A

Citation: Y. Nabetani et al., INITIAL GROWTH STAGE AND OPTICAL-PROPERTIES OF A 3-DIMENSIONAL INAS STRUCTURE ON GAAS, Journal of applied physics, 76(1), 1994, pp. 347-351

MORPHOLOGICAL TRANSITION OF INAS ISLANDS ON GAAS(001) UPON DEPOSITIONOF A GAAS CAPPING LAYER

Authors: LIN XW WASHBURN J LILIENTALWEBER Z WEBER ER SASAKI A WAKAHARA A NABETANI Y

Citation: Xw. Lin et al., MORPHOLOGICAL TRANSITION OF INAS ISLANDS ON GAAS(001) UPON DEPOSITIONOF A GAAS CAPPING LAYER, Applied physics letters, 65(13), 1994, pp. 1677-1679

Risultati: 1-9 |