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Results:
1-18
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Results: 18
Authors:
OH JW
KIM CY
NAHM KS
SIM KS
Citation: Jw. Oh et al., THE HYDRIDING KINETICS OF LANI4.5AL0.5 WITH HYDROGEN, Journal of alloys and compounds, 278(1-2), 1998, pp. 270-276
Authors:
SHIM HW
NAHM KS
SUH EK
Citation: Hw. Shim et al., EFFECTS OF THE GAS FEEDING METHOD ON THE PROPERTIES OF 3C-SIC SI(111)GROWN BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION/, Journal of the Korean Physical Society, 33(2), 1998, pp. 154-157
Authors:
PARK KS
NAHM KS
KIMOTO T
MATSUNAMI H
Citation: Ks. Park et al., AN ANALYSIS OF THE PHOTORESPONSE OF A 6H-SIC UV PHOTODIODE, Journal of the Korean Physical Society, 33(1), 1998, pp. 86-90
Authors:
KIM KC
SHIM HW
SUH EK
LEE HJ
NAHM KS
Citation: Kc. Kim et al., GROWTH OF HIGH-QUALITY 3C-SIC ON A SI(111) SUBSTRATE BY CHEMICAL-VAPOR-DEPOSITION, Journal of the Korean Physical Society, 32(4), 1998, pp. 588-593
Authors:
LEE YS
SUN YK
NAHM KS
Citation: Ys. Lee et al., SYNTHESIS OF SPINEL LIMN2O4 CATHODE MATERIAL PREPARED BY AN ADIPIC ACID-ASSISTED SOL-GEL METHOD FOR LITHIUM SECONDARY BATTERIES, Solid state ionics, 109(3-4), 1998, pp. 285-294
Authors:
SEO YH
KIM KC
SHIM HW
NAHM KS
SUH EK
LEE HJ
KIM DK
LEE BT
Citation: Yh. Seo et al., EFFECTS OF EXPERIMENTAL PARAMETERS ON VOID FORMATION IN THE GROWTH OF3C-SIC THIN-FILM ON SI SUBSTRATE, Journal of the Electrochemical Society, 145(1), 1998, pp. 292-299
Authors:
SEO YH
NAHM KS
SUH EK
LEE HJ
HWANG YG
Citation: Yh. Seo et al., GROWTH-MECHANISM OF 3C-SIC(111) FILMS ON SI USING TETRAMETHYLSILANE BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2226-2233
Authors:
NAHM KS
SEO YH
LEE HJ
Citation: Ks. Nahm et al., FORMATION MECHANISM OF STAINS DURING SI ETCHING REACTION IN HF-OXIDIZING AGENT H2O SOLUTIONS, Journal of applied physics, 81(5), 1997, pp. 2418-2424
Authors:
SHIM HW
KIM KC
SEO YH
NAHM KS
SUH EK
LEE HJ
Citation: Hw. Shim et al., ANOMALOUS PHOTOLUMINESCENCE FROM 3C-SIC GROWN ON SI(111) BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 70(13), 1997, pp. 1757-1759
Authors:
AN MH
SUH MS
KIM KJ
YOUN CJ
NAHM KS
LEE KB
Citation: Mh. An et al., CHARACTERISTICS OF N-BOND STRUCTURES IN SILICON-OXIDE FILMS DEPOSITEDBY ECR PLASMA CVD WITH A SIH4 N2O GAS-MIXTURE WHEN ADDING N-2/, Journal of the Korean Physical Society, 29(3), 1996, pp. 384-391
Authors:
SEO YH
NAHM KS
SUH EK
LEE HJ
Citation: Yh. Seo et al., GROWTH-MECHANISM OF 3C-SIC(111) ON SI WITHOUT CARBONIZATION PROCESS, The Korean journal of chemical engineering, 13(5), 1996, pp. 522-529
Authors:
MOON SS
NAHM KS
Citation: Ss. Moon et Ks. Nahm, AN IMPROVEMENT IN THE PROPERTIES OF HYDROGEN STORAGE ALLOY BY COPPER MICROENCAPSULATION, Journal of alloys and compounds, 224(1), 1995, pp. 140-147
Authors:
SEO YH
NAHM KS
JEON HI
SUH EK
LEE YH
LEE HJ
HWANG YG
Citation: Yh. Seo et al., LIGHT-EMITTING MECHANISM AND PORE-SIZE CONTROL OF POROUS SILICON LAYERS, Journal of the Korean Physical Society, 28, 1995, pp. 75-79
Authors:
NAHM KS
SEO YH
Citation: Ks. Nahm et Yh. Seo, MECHANISM OF SILICON ETCHING IN HF-KMNO(4)-H2O SOLUTION, The Korean journal of chemical engineering, 12(2), 1995, pp. 162-167
Authors:
SEO YH
NAHM KS
AN MH
SUH EK
LEE YH
LEE KB
LEE HJ
Citation: Yh. Seo et al., FORMATION MECHANISM AND PORE SIZE CONTROL OF LIGHT-EMITTING POROUS SILICON, JPN J A P 1, 33(12A), 1994, pp. 6425-6431
Authors:
SEO YH
NAHM KS
HAHN YB
KIM CB
Citation: Yh. Seo et al., REACTION-KINETICS OF SILICON ETCHING IN HF-K2CR2O7-H2O SOLUTION, The Korean journal of chemical engineering, 11(2), 1994, pp. 89-95
Authors:
LEE HJ
SEO YH
OH DH
NAHM KS
HAHN YB
JEON IC
SUH EK
LEE YH
LEE HJ
Citation: Hj. Lee et al., LIGHT-EMISSION PHENOMENA FROM POROUS SILICON - SILOXENE COMPOUNDS ANDQUANTUM-SIZE EFFECT, Journal of applied physics, 75(12), 1994, pp. 8060-8065
Authors:
SEO YH
NAHM KS
LEE KB
Citation: Yh. Seo et al., MECHANISTIC STUDY OF SILICON ETCHING IN HF-KBRO3-H2O SOLUTION, Journal of the Electrochemical Society, 140(5), 1993, pp. 1453-1458
Risultati:
1-18
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