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Results: 1-25 | 26-50 | 51-61
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AN APPROACH TO IDEAL SEMICONDUCTOR ELECTRODES FOR EFFICIENT PHOTOELECTROCHEMICAL REDUCTION OF CARBON-DIOXIDE BY MODIFICATION WITH SMALL METAL PARTICLES
Authors: HINOGAMI R NAKAMURA Y YAE S NAKATO Y
Citation: R. Hinogami et al., AN APPROACH TO IDEAL SEMICONDUCTOR ELECTRODES FOR EFFICIENT PHOTOELECTROCHEMICAL REDUCTION OF CARBON-DIOXIDE BY MODIFICATION WITH SMALL METAL PARTICLES, JOURNAL OF PHYSICAL CHEMISTRY B, 102(6), 1998, pp. 974-980
NATURE OF ELECTRICAL JUNCTION AT THE TIO2 SUBSTRATE INTERFACE FOR PARTICULATE TIO2 FILM ELECTRODES IN AQUEOUS-ELECTROLYTES
Authors: SHIGA A TSUJIKO A IDE T YAE S NAKATO Y
Citation: A. Shiga et al., NATURE OF ELECTRICAL JUNCTION AT THE TIO2 SUBSTRATE INTERFACE FOR PARTICULATE TIO2 FILM ELECTRODES IN AQUEOUS-ELECTROLYTES, JOURNAL OF PHYSICAL CHEMISTRY B, 102(31), 1998, pp. 6049-6055
ELECTROCHEMICAL OSCILLATIONS AND CATALYTI C REACTIONS
Authors: NAKATO Y
Citation: Y. Nakato, ELECTROCHEMICAL OSCILLATIONS AND CATALYTI C REACTIONS, Denki Kagaku Oyobi Kogyo Butsuri Kagaku, 66(3), 1998, pp. 234-239
MODULATION OF THE OSCILLATION PERIOD FOR AN ELECTROCHEMICAL OSCILLATION IN AN H2O2-ACID-PT ELECTRODE SYSTEM BY DEPOSITION OF A SMALL AMOUNTOF METAL ATOMS
Authors: NAKANISHI S HOMMURA H MUKOUYAMA Y MATSUDA T NAKATO Y
Citation: S. Nakanishi et al., MODULATION OF THE OSCILLATION PERIOD FOR AN ELECTROCHEMICAL OSCILLATION IN AN H2O2-ACID-PT ELECTRODE SYSTEM BY DEPOSITION OF A SMALL AMOUNTOF METAL ATOMS, Chemistry Letters, (10), 1998, pp. 977-978
APPEARANCE OF A NEW OSCILLATION (NAMED OSCILLATION-C) IN H2O2- REDUCTION REACTION ON A PT ELECTRODE IN ACIDIC SOLUTIONS BY ADDITION OF A SMALL AMOUNT OF CHLORIDE-IONS
Authors: MUKOUYAMA Y KONISHI K NAKANISHI S NAKATO Y
Citation: Y. Mukouyama et al., APPEARANCE OF A NEW OSCILLATION (NAMED OSCILLATION-C) IN H2O2- REDUCTION REACTION ON A PT ELECTRODE IN ACIDIC SOLUTIONS BY ADDITION OF A SMALL AMOUNT OF CHLORIDE-IONS, Chemistry Letters, (10), 1998, pp. 1009-1010
HIGH PHOTOCURRENT QUANTUM YIELDS IN SHORT WAVELENGTHS FOR NANOCRYSTALLINE ANATASE-TYPE TIO2 FILM ELECTRODES COMPARED WITH THOSE FOR RUTILE-TYPE
Authors: SHIGA A TSUJIKO A YAE S NAKATO Y
Citation: A. Shiga et al., HIGH PHOTOCURRENT QUANTUM YIELDS IN SHORT WAVELENGTHS FOR NANOCRYSTALLINE ANATASE-TYPE TIO2 FILM ELECTRODES COMPARED WITH THOSE FOR RUTILE-TYPE, Bulletin of the Chemical Society of Japan, 71(9), 1998, pp. 2119-2125
OXIDE THICKNESS DEPENDENCE OF ENERGY SHIFTS IN THE SI 2P LEVELS FOR THE SIO2 SI STRUCTURE, AND ITS ELIMINATION BY A PALLADIUM OVERLAYER/
Authors: KOBAYASHI H KUBOTA T KAWA H NAKATO Y NISHIYAMA M
Citation: H. Kobayashi et al., OXIDE THICKNESS DEPENDENCE OF ENERGY SHIFTS IN THE SI 2P LEVELS FOR THE SIO2 SI STRUCTURE, AND ITS ELIMINATION BY A PALLADIUM OVERLAYER/, Applied physics letters, 73(7), 1998, pp. 933-935
PHOTOLUMINESCENCE FROM A BULK DEFECT NEAR-THE-SURFACE OF AN N-TIO2 (RUTILE) ELECTRODE IN RELATION TO AN INTERMEDIATE OF PHOTOOXIDATION REACTION OF WATER
Authors: NAKATO Y AKANUMA H MAGARI Y YAE S SHIMIZU JI MORI H
Citation: Y. Nakato et al., PHOTOLUMINESCENCE FROM A BULK DEFECT NEAR-THE-SURFACE OF AN N-TIO2 (RUTILE) ELECTRODE IN RELATION TO AN INTERMEDIATE OF PHOTOOXIDATION REACTION OF WATER, JOURNAL OF PHYSICAL CHEMISTRY B, 101(25), 1997, pp. 4934-4939
IMPROVEMENT IN PHOTOVOLTAGE AND STABILITY OF POROUS N-SI ELECTRODES COATED WITH PLATINUM BY REGULATION OF THE THICKNESS OF NANOPOROUS LAYERS
Authors: KAWAKAMI K FUJII T YAE S NAKATO Y
Citation: K. Kawakami et al., IMPROVEMENT IN PHOTOVOLTAGE AND STABILITY OF POROUS N-SI ELECTRODES COATED WITH PLATINUM BY REGULATION OF THE THICKNESS OF NANOPOROUS LAYERS, JOURNAL OF PHYSICAL CHEMISTRY B, 101(23), 1997, pp. 4508-4513
MODULATION OF FLAT-BAND POTENTIAL AND INCREASE IN PHOTOVOLTAGE FOR N-SI ELECTRODES BY FORMATION OF HALOGEN ATOM TERMINATED SURFACE BONDS
Authors: FUJITANI M HINOGAMI R JIA JG ISHIDA M MORISAWA K YAE S NAKATO Y
Citation: M. Fujitani et al., MODULATION OF FLAT-BAND POTENTIAL AND INCREASE IN PHOTOVOLTAGE FOR N-SI ELECTRODES BY FORMATION OF HALOGEN ATOM TERMINATED SURFACE BONDS, Chemistry Letters, (10), 1997, pp. 1041-1042
MODIFICATION OF SEMICONDUCTOR SURFACE WITH ULTRAFINE METAL PARTICLES FOR EFFICIENT PHOTOELECTROCHEMICAL REDUCTION OF CARBON-DIOXIDE
Authors: HINOGAMI R NAKAMURA Y YAE S NAKATO Y
Citation: R. Hinogami et al., MODIFICATION OF SEMICONDUCTOR SURFACE WITH ULTRAFINE METAL PARTICLES FOR EFFICIENT PHOTOELECTROCHEMICAL REDUCTION OF CARBON-DIOXIDE, Applied surface science, 121, 1997, pp. 301-304
EFFECTS OF INTERFACE ROUGHNESS ON THE DENSITY OF INTERFACE STATES AT ULTRATHIN OXIDE SI INTERFACES - XPS MEASUREMENTS UNDER BIASES/
Authors: YAMASHITA Y NAKATO Y KATO H NISHIOKA Y KOBAYASHI H
Citation: Y. Yamashita et al., EFFECTS OF INTERFACE ROUGHNESS ON THE DENSITY OF INTERFACE STATES AT ULTRATHIN OXIDE SI INTERFACES - XPS MEASUREMENTS UNDER BIASES/, Applied surface science, 117, 1997, pp. 176-180
PALLADIUM-PROMOTED OXIDATION OF SI AT LOW-TEMPERATURES
Authors: KOBAYASHI H KAWA H YUASA T NAKATO Y YONEDA K
Citation: H. Kobayashi et al., PALLADIUM-PROMOTED OXIDATION OF SI AT LOW-TEMPERATURES, Applied surface science, 114, 1997, pp. 590-594
PLATINUM-ENHANCED OXIDATION OF GAAS
Authors: KUBOTA T NAKATO Y YONEDA K KOBAYASHI H
Citation: T. Kubota et al., PLATINUM-ENHANCED OXIDATION OF GAAS, Physical review. B, Condensed matter, 56(12), 1997, pp. 7428-7434
NEW METHOD FOR OBSERVATION OF INTERFACE STATES IN THE SEMICONDUCTOR BAND-GAP - XPS MEASUREMENTS UNDER BIASES
Authors: KOBAYASHI H YAMASHITA Y NAKATO Y
Citation: H. Kobayashi et al., NEW METHOD FOR OBSERVATION OF INTERFACE STATES IN THE SEMICONDUCTOR BAND-GAP - XPS MEASUREMENTS UNDER BIASES, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 44(2), 1997, pp. 201-206
IMPROVEMENT OF [INDIUM-TIN-OXIDE SILICON-OXIDE N-SI] JUNCTION SOLAR-CELL CHARACTERISTICS BY CYANIDE TREATMENT
Authors: KOBAYASHI H TACHIBANA S YAMANAKA K NAKATO Y YONEDA K
Citation: H. Kobayashi et al., IMPROVEMENT OF [INDIUM-TIN-OXIDE SILICON-OXIDE N-SI] JUNCTION SOLAR-CELL CHARACTERISTICS BY CYANIDE TREATMENT, Journal of applied physics, 81(11), 1997, pp. 7630-7634
EFFECT OF CHEMICAL OXIDE LAYERS ON PLATINUM-ENHANCED OXIDATION OF SILICON
Authors: NAMBA K YUASA T NAKATO Y YONEDA K KATO H KOBAYASHI H
Citation: K. Namba et al., EFFECT OF CHEMICAL OXIDE LAYERS ON PLATINUM-ENHANCED OXIDATION OF SILICON, Journal of applied physics, 81(10), 1997, pp. 7006-7011
HOLE DIFFUSION LENGTH AND TEMPERATURE-DEPENDENCE OF PHOTOVOLTAGES FORN-SI ELECTRODES MODIFIED WITH LB LAYERS OF ULTRAFINE PLATINUM PARTICLES
Authors: JIA JG FUJITANI M YAE S NAKATO Y
Citation: Jg. Jia et al., HOLE DIFFUSION LENGTH AND TEMPERATURE-DEPENDENCE OF PHOTOVOLTAGES FORN-SI ELECTRODES MODIFIED WITH LB LAYERS OF ULTRAFINE PLATINUM PARTICLES, Electrochimica acta, 42(3), 1997, pp. 431-437
IDENTIFICATION OF ELECTRICAL COUPLING THROUGH THE ELECTROLYTE AS THE MECHANISM FOR SYNCHRONIZATION OF ELECTROCHEMICAL OSCILLATIONS
Authors: MATSUDA T MUKOUYAMA Y HOMMURA H YAE S NAKATO Y
Citation: T. Matsuda et al., IDENTIFICATION OF ELECTRICAL COUPLING THROUGH THE ELECTROLYTE AS THE MECHANISM FOR SYNCHRONIZATION OF ELECTROCHEMICAL OSCILLATIONS, Journal of the Electrochemical Society, 144(9), 1997, pp. 2996-3001
IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF (INDIUM-TIN OXIDE SILICON-OXIDE POLYCRYSTALLINE N-SI) SOLAR-CELLS BY A KCN TREATMENT
Authors: KOBAYASHI H TACHIBANA S NAKATO Y YONEDA K
Citation: H. Kobayashi et al., IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF (INDIUM-TIN OXIDE SILICON-OXIDE POLYCRYSTALLINE N-SI) SOLAR-CELLS BY A KCN TREATMENT, Journal of the Electrochemical Society, 144(8), 1997, pp. 2893-2897
NEW CURRENT AND POTENTIAL OSCILLATIONS FOR REDUCTION REACTIONS ON PLATINUM-ELECTRODES IN ACID-SOLUTIONS CONTAINING HIGH-CONCENTRATION HYDROGEN-PEROXIDE
Authors: MATSUDA T HOMMURA H MUKOUYAMA Y YAE S NAKATO Y
Citation: T. Matsuda et al., NEW CURRENT AND POTENTIAL OSCILLATIONS FOR REDUCTION REACTIONS ON PLATINUM-ELECTRODES IN ACID-SOLUTIONS CONTAINING HIGH-CONCENTRATION HYDROGEN-PEROXIDE, Journal of the Electrochemical Society, 144(6), 1997, pp. 1988-1994
NITRIDATION OF SILICON-OXIDE LAYERS BY NITROGEN PLASMA GENERATED BY LOW-ENERGY-ELECTRON IMPACT
Authors: KOBAYASHI H MIZOKURO T NAKATO Y YONEDA K TODOKORO Y
Citation: H. Kobayashi et al., NITRIDATION OF SILICON-OXIDE LAYERS BY NITROGEN PLASMA GENERATED BY LOW-ENERGY-ELECTRON IMPACT, Applied physics letters, 71(14), 1997, pp. 1978-1980
MICROWAVE PHOTOELECTROCHEMICAL STUDIES OF SILICON INTERFACES COVERED WITH PLATINUM DOTS
Authors: WUNSCH F NAKATO Y KUNST M TRIBUTSCH H
Citation: F. Wunsch et al., MICROWAVE PHOTOELECTROCHEMICAL STUDIES OF SILICON INTERFACES COVERED WITH PLATINUM DOTS, Journal of the Chemical Society. Faraday transactions, 92(20), 1996, pp. 4053-4059
MINORITY-CARRIER CONTROLLED PEC SOLAR-CELLS, USING N-SI ELECTRODES MODIFIED WITH LB LAYERS OF ULTRAFINE PT PARTICLES
Authors: YAE SJ FUJITANI M NAKANISHI I UETSUJI M TSUDA R NAKATO Y
Citation: Sj. Yae et al., MINORITY-CARRIER CONTROLLED PEC SOLAR-CELLS, USING N-SI ELECTRODES MODIFIED WITH LB LAYERS OF ULTRAFINE PT PARTICLES, Solar energy materials and solar cells, 43(3), 1996, pp. 311-318
OSCILLATORY BEHAVIOR IN ELECTROCHEMICAL DEPOSITION REACTION OF POLYCRYSTALLINE SILICON THIN-FILMS THROUGH REDUCTION OF SILICON TETRACHLORIDE IN A MOLTEN-SALT ELECTROLYTE
Authors: MATSUDA T NAKAMURA S IDE K NYUDO K YAE SJ NAKATO Y
Citation: T. Matsuda et al., OSCILLATORY BEHAVIOR IN ELECTROCHEMICAL DEPOSITION REACTION OF POLYCRYSTALLINE SILICON THIN-FILMS THROUGH REDUCTION OF SILICON TETRACHLORIDE IN A MOLTEN-SALT ELECTROLYTE, Chemistry Letters, (7), 1996, pp. 569-570
Risultati: 1-25 | 26-50 | 51-61