AAAAAA
Results: 26-50/61
Authors:
MUKOUYAMA Y
HOMMURA H
MATSUDA T
YAE S
NAKATO Y
Citation: Y. Mukouyama et al., SYNCHRONOUS CURRENT OSCILLATIONS IN ELECTROCHEMICAL REDUCTION REACTIONS ON 2 PLATINUM-ELECTRODES IN SULFURIC-ACID-SOLUTION CONTAINING HYDROGEN-PEROXIDE, Chemistry Letters, (6), 1996, pp. 463-464
Authors:
HOMMURA H
MUKOUYAMA Y
MATSUDA T
YAE S
NAKATO Y
Citation: H. Hommura et al., NEW ELECTROCHEMICAL OSCILLATIONS IN REDUCTION REACTIONS ON A PLATINUM-ELECTRODE IN HYDROGEN-PEROXIDE CONTAINING SULFURIC-ACID-SOLUTIONS, Chemistry Letters, (5), 1996, pp. 391-392
Authors:
KOBAYASHI H
NAMBA K
YAMASHITA Y
NAKATO Y
NISHIOKA Y
Citation: H. Kobayashi et al., INTERFACE STATES IN THE SI BAND-GAP OBTAINED FROM XPS MEASUREMENTS UNDER BIASES, Surface science, 358(1-3), 1996, pp. 455-458
Authors:
KOBAYASHI H
YUASA T
NAKATO Y
YONEDA K
TODOKORO Y
Citation: H. Kobayashi et al., LOW-TEMPERATURE CATALYTIC FORMATION OF SI-BASED METAL-OXIDE-SEMICONDUCTOR STRUCTURE, Journal of applied physics, 80(7), 1996, pp. 4124-4128
Authors:
KOBAYASHI H
NAMBA K
YAMASHITA Y
NAKATO Y
KOMEDA T
NISHIOKA Y
Citation: H. Kobayashi et al., INTERFACE STATE-INDUCED SHIFT OF THE OXIDE AND SEMICONDUCTOR CORE LEVELS FOR METAL-OXIDE-SEMICONDUCTOR DEVICES, Journal of applied physics, 80(3), 1996, pp. 1578-1582
Authors:
YAMASHITA Y
NAMBA K
NAKATO Y
NISHIOKA Y
KOBAYASHI H
Citation: Y. Yamashita et al., SPECTROSCOPIC OBSERVATION OF INTERFACE STATES OF ULTRATHIN SILICON-OXIDE, Journal of applied physics, 79(9), 1996, pp. 7051-7057
Authors:
KOBAYASHI H
YAMASHITA Y
NAKATO Y
KOMEDA T
NISHIOKA Y
Citation: H. Kobayashi et al., INTERFACE STATES AT ULTRATHIN OXIDE SI(111) INTERFACES OBTAINED FROM X-RAY PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS UNDER BIASES/, Applied physics letters, 69(15), 1996, pp. 2276-2278
Authors:
KOBAYASHI H
YAMASHITA Y
MORI T
NAKATO Y
KOMEDA T
NISHIOKA Y
Citation: H. Kobayashi et al., INTERFACE STATES FOR SI-BASED MOS DEVICES WITH AN ULTRATHIN OXIDE LAYER - X-RAY PHOTOELECTRON SPECTROSCOPIC MEASUREMENTS UNDER BIASES, JPN J A P 1, 34(2B), 1995, pp. 959-964
Authors:
KOBAYASHI H
KUBOTA T
TOSHIKAWA N
NAKATO Y
Citation: H. Kobayashi et al., MECHANISM OF OPEN-CIRCUIT PHOTOVOLTAGES FOR SILICON-VERTICAL-BAR-METHANOL JUNCTION SOLAR-CELLS, Journal of electroanalytical chemistry [1992], 398(1-2), 1995, pp. 165-168
Authors:
NAKATO Y
AKANUMA H
SHIMIZU J
MAGARI Y
Citation: Y. Nakato et al., PHOTOOXIDATION REACTION OF WATER ON AN N-TIO2 ELECTRODE - IMPROVEMENTIN EFFICIENCY THROUGH FORMATION OF SURFACE MICROPORES BY PHOTO-ETCHING IN H2SO4, Journal of electroanalytical chemistry [1992], 396(1-2), 1995, pp. 35-39
Authors:
NAKATO Y
KAI K
KAWABE K
Citation: Y. Nakato et al., IMPROVEMENT OF CHARACTERISTICS OF NEW-TYPE SOLAR-CELLS, HAVING A TRANSPARENT CONDUCTOR THIN SIO2 LAYER WITH ULTRAFINE METAL PARTICLES AS CONDUCTIVE CHANNELS N-SI JUNCTION, Solar energy materials and solar cells, 37(3-4), 1995, pp. 323-335
Authors:
KOBAYASHI H
IWADATE H
NAKATO Y
Citation: H. Kobayashi et al., ROLE AND MECHANISM OF THE FORMATION OF HYDROGEN-INDUCED INTERFACE STATES FOR PLATINUM SILICON-OXIDE SILICON MOS TUNNELING DIODES, Sensors and actuators. B, Chemical, 25(1-3), 1995, pp. 815-818
Authors:
KOBAYASHI H
KUBOTA T
NAMBA K
NAKATO Y
NISHIOKA Y
Citation: H. Kobayashi et al., A NEW SPECTROSCOPIC METHOD FOR DETERMINATION OF ENERGY-DISTRIBUTION OF INTERFACE STATES IN THE SEMICONDUCTOR BAND-GAP, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 595-600
Authors:
YAE SJ
NAKATO Y
Citation: Sj. Yae et Y. Nakato, RECENT ADVANCES IN PHOTOELECTROCHEMISTRY - SURFACE MODIFICATION IN SEMICONDUCTOR PHOTOELECTROCHEMISTRY, Denki Kagaku Oyobi Kogyo Butsuri Kagaku, 63(1), 1995, pp. 5-9
Authors:
OHTANI B
KUSAKABE S
NISHIMOTO SI
MATSUMURA M
NAKATO Y
Citation: B. Ohtani et al., IMPROVEMENT OF PHOTOCATALYTIC ACTIVITY AND PRODUCT SELECTIVITY BY CADMIUM METAL DEPOSITED IN-SITU ON SUSPENDED CADMIUM(II) SULFIDE PARTICLES, Chemistry Letters, (9), 1995, pp. 803-804
Authors:
KOBAYASHI H
NAMBA K
MORI T
NAKATO Y
Citation: H. Kobayashi et al., ENERGY-DISTRIBUTION OF INTERFACE STATES IN THE BAND-GAP OF GAAS DETERMINED FROM X-RAY PHOTOELECTRON-SPECTRA UNDER BIASES, Physical review. B, Condensed matter, 52(8), 1995, pp. 5781-5788
Authors:
KOBAYASHI H
YAMASHITA Y
MORI T
NAKATO Y
PARK KH
NISHIOKA Y
Citation: H. Kobayashi et al., ENERGY-DISTRIBUTION OF SURFACE-STATES IN THE SI BAND-GAP FOR MOS DIODES OBTAINED FROM XPS MEASUREMENTS UNDER BIASES, Surface science, 326(1-2), 1995, pp. 124-132
Authors:
KOBAYASHI H
ISHIDA T
NAKATO Y
MORI H
Citation: H. Kobayashi et al., MECHANISM OF CARRIER TRANSPORT THROUGH A SILICON-OXIDE LAYER FOR [INDIUM-TIN-OXIDE SILICON-OXIDE/SILICON] SOLAR-CELLS/, Journal of applied physics, 78(6), 1995, pp. 3931-3939
Authors:
KOBAYASHI H
IWADATE H
KOGETSU Y
NAKATO Y
Citation: H. Kobayashi et al., MECHANISM OF THE FORMATION OF HYDROGEN-INDUCED INTERFACE STATES FOR PT SILICON OXIDE/SI METAL-OXIDE-SEMICONDUCTOR TUNNELING DIODES/, Journal of applied physics, 78(11), 1995, pp. 6554-6561
Authors:
KOBAYASHI H
MORI H
ISHIDA T
NAKATO Y
Citation: H. Kobayashi et al., ZINC-OXIDE N-SI JUNCTION SOLAR-CELLS PRODUCED BY SPRAY-PYROLYSIS METHOD, Journal of applied physics, 77(3), 1995, pp. 1301-1307
Authors:
KOBAYASHI H
MIZUNO F
NAKATO Y
Citation: H. Kobayashi et al., IMPROVEMENT IN HYDROGEN PHOTOEVOLUTION EFFICIENCY FOR PLATINUM-DEPOSITED INDIUM-PHOSPHIDE ELECTRODES BY THE REMOVAL OF SURFACE-STATES, JPN J A P 1, 33(10), 1994, pp. 6065-6070
Authors:
KOBAYASHI H
YAMASHITA Y
NAMBA K
NAKATO Y
Citation: H. Kobayashi et al., DIRECT SPECTROSCOPIC EVIDENCE OF BIAS-INDUCED SHIFTS OF SEMICONDUCTORBAND EDGES FOR METAL-INSULATOR-SEMICONDUCTOR DIODES, JPN J A P 2, 33(5B), 1994, pp. 120000754-120000756
Authors:
KOBAYASHI H
KOGETSU Y
IKEZUMI K
NAKATO Y
Citation: H. Kobayashi et al., IMPROVEMENT OF N-SI PHOTOELECTROCHEMICAL CELLS BY THE USE OF ACETONE PLUS METHANOL MIXTURES AS ELECTROLYTE SOLVENTS, Journal of electroanalytical chemistry [1992], 371(1-2), 1994, pp. 53-58
Authors:
HINOGAMI R
MORI T
YAE SJ
NAKATO Y
Citation: R. Hinogami et al., EFFICIENT PHOTOELECTROCHEMICAL REDUCTION OF CARBON-DIOXIDE ON A P-TYPE SILICON (P-SI) ELECTRODE MODIFIED WITH VERY SMALL COPPER PARTICLES, Chemistry Letters, (9), 1994, pp. 1725-1728
Authors:
KOBAYASHI H
MIZUNO F
NAKATO Y
Citation: H. Kobayashi et al., SURFACE-STATES IN THE BAND-GAP FOR PT-DEPOSITED P-INP PHOTOELECTROCHEMICAL CELLS, Applied surface science, 81(4), 1994, pp. 399-408