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Authors: IMAIZUMI M KUROKI H ENDOH Y SUITA M OHTSUKA K ISU T NAMIZAKI H NUNOSHITA M
Citation: M. Imaizumi et al., LOW-RESISTIVITY P-TYPE ZNSE, ZNSSE AND MGZNSSE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 257-260

Authors: IMAIZUMI M ENDOH Y SUITA M OHTSUKA K ISU T NAMIZAKI H NUNOSHITA M
Citation: M. Imaizumi et al., ZNCDSE-MGZNSSE LASER-DIODES FABRICATED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 1167-1167

Authors: SUGAWARA T KOBAYASHI K MURAI H BAERT K SAKAMOTO T TOKIOKA H MASUTANI Y NAMIZAKI H NUNOSHITA M
Citation: T. Sugawara et al., LIQUID-CRYSTAL 1.8-IN DISPLAYS USING POLY-SI THIN-FILM TRANSISTORS WITH NOVEL STRUCTURE AND A STORAGE-CAPACITANCE ARRANGEMENT, Optical engineering, 33(11), 1994, pp. 3683-3689

Authors: BAERT K MURAI H KOBAYASHI K NAMIZAKI H NUNOSHITA M
Citation: K. Baert et al., HYDROGEN PASSIVATION OF POLYSILICON THIN-FILM TRANSISTORS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA, JPN J A P 1, 32(6A), 1993, pp. 2601-2606
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