Authors:
IMAIZUMI M
KUROKI H
ENDOH Y
SUITA M
OHTSUKA K
ISU T
NAMIZAKI H
NUNOSHITA M
Citation: M. Imaizumi et al., LOW-RESISTIVITY P-TYPE ZNSE, ZNSSE AND MGZNSSE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 257-260
Authors:
IMAIZUMI M
ENDOH Y
SUITA M
OHTSUKA K
ISU T
NAMIZAKI H
NUNOSHITA M
Citation: M. Imaizumi et al., ZNCDSE-MGZNSSE LASER-DIODES FABRICATED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 1167-1167
Authors:
SUGAWARA T
KOBAYASHI K
MURAI H
BAERT K
SAKAMOTO T
TOKIOKA H
MASUTANI Y
NAMIZAKI H
NUNOSHITA M
Citation: T. Sugawara et al., LIQUID-CRYSTAL 1.8-IN DISPLAYS USING POLY-SI THIN-FILM TRANSISTORS WITH NOVEL STRUCTURE AND A STORAGE-CAPACITANCE ARRANGEMENT, Optical engineering, 33(11), 1994, pp. 3683-3689
Authors:
BAERT K
MURAI H
KOBAYASHI K
NAMIZAKI H
NUNOSHITA M
Citation: K. Baert et al., HYDROGEN PASSIVATION OF POLYSILICON THIN-FILM TRANSISTORS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA, JPN J A P 1, 32(6A), 1993, pp. 2601-2606