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Results: 1-10 |
Results: 10
PHASE-TRANSITION BETWEEN C(4X2) AND P(2X2) STRUCTURES OF THE SI(100) SURFACE AT 6K CAUSED BY THE FLUCTUATION OF PHASE DEFECTS ON DIMER ROWSDUE TO DIMER FLIP-FLOP MOTION
Authors: SHIGEKAWA H MIYAKE K ISHIDA M HATA K OIGAWA H NANNICHI Y YOSHIZAKI R KAWAZU A ABE T OZAWA T NAGAMURA T
Citation: H. Shigekawa et al., PHASE-TRANSITION BETWEEN C(4X2) AND P(2X2) STRUCTURES OF THE SI(100) SURFACE AT 6K CAUSED BY THE FLUCTUATION OF PHASE DEFECTS ON DIMER ROWSDUE TO DIMER FLIP-FLOP MOTION, JPN J A P 2, 35(8B), 1996, pp. 1081-1084
QUENCHED SI(111)-DAS (DIMER-ADATOM-STACKING FAULT) STRUCTURES STUDIEDBY SCANNING-TUNNELING-MICROSCOPY
Authors: MIYAKE K ISHIDA M UCHIKAWA M HATA K SHIGEKAWA H NANNICHI Y YOSHIZAKI R
Citation: K. Miyake et al., QUENCHED SI(111)-DAS (DIMER-ADATOM-STACKING FAULT) STRUCTURES STUDIEDBY SCANNING-TUNNELING-MICROSCOPY, Surface science, 358(1-3), 1996, pp. 464-467
SURFACE SUPERSTRUCTURES OF QUASI-ONE-DIMENSIONAL ORGANIC CONDUCTOR BETA-(BEDT-TTF)(2)PF6 CRYSTAL STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: SHIGEKAWA H MIYAKE K MIYAUCHI A ISHIDA M OIGAWA H NANNICHI Y YOSHIZAKI R MORI T
Citation: H. Shigekawa et al., SURFACE SUPERSTRUCTURES OF QUASI-ONE-DIMENSIONAL ORGANIC CONDUCTOR BETA-(BEDT-TTF)(2)PF6 CRYSTAL STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 52(23), 1995, pp. 16361-16364
SURFACE-STRUCTURES OF GAAS PASSIVATED BY CHALCOGEN ATOMS
Authors: SHIGEKAWA H OIGAWA H MIYAKE K AISO Y NANNICHI Y SAITO Y HASHIZUME T SAKURAI T
Citation: H. Shigekawa et al., SURFACE-STRUCTURES OF GAAS PASSIVATED BY CHALCOGEN ATOMS, Applied surface science, 75, 1994, pp. 169-174
MOLECULAR-STRUCTURE OF A CRYSTAL PHASE COEXISTING WITH KAPPA-(BEDT-TTF)(2)CU(NCS)(2) STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: SHIGEKAWA H MIYAKE K OIGAWA H NANNICHI Y MORI T SAITO Y
Citation: H. Shigekawa et al., MOLECULAR-STRUCTURE OF A CRYSTAL PHASE COEXISTING WITH KAPPA-(BEDT-TTF)(2)CU(NCS)(2) STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 50(20), 1994, pp. 15427-15430
SCHOTTKY AND OHMIC CONTACTS OF PD ON P-TYPE GAAS DISTINGUISHED WITH HYDROGEN
Authors: NIE HY NANNICHI Y
Citation: Hy. Nie et Y. Nannichi, SCHOTTKY AND OHMIC CONTACTS OF PD ON P-TYPE GAAS DISTINGUISHED WITH HYDROGEN, Journal of applied physics, 76(7), 1994, pp. 4205-4208
SELENIUM-TREATED GAAS(001)-2X3 SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: SHIGEKAWA H OIGAWA H MIYAKE K AISO Y NANNICHI Y HASHIZUME T SAKURAI T
Citation: H. Shigekawa et al., SELENIUM-TREATED GAAS(001)-2X3 SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Applied physics letters, 65(5), 1994, pp. 607-609
APPARENT RECOVERY EFFECT OF HYDROGENATED PD-ON-GAAS (N-TYPE) SCHOTTKYINTERFACE BY FORWARD CURRENT AT LOW-TEMPERATURE
Authors: NIE HY NANNICHI Y
Citation: Hy. Nie et Y. Nannichi, APPARENT RECOVERY EFFECT OF HYDROGENATED PD-ON-GAAS (N-TYPE) SCHOTTKYINTERFACE BY FORWARD CURRENT AT LOW-TEMPERATURE, JPN J A P 2, 32(7A), 1993, pp. 890-893
COMBINED ANALYSIS OF OVERLAYER S/GAAS INTERFACES WITH PHOTOEMISSION SPECTROSCOPY AND X-RAY STANDING-WAVE/
Authors: OSHIMA M SCIMECA T SUGIYAMA M MAEYAMA S OIGAWA H NANNICHI Y HASHIZUME H
Citation: M. Oshima et al., COMBINED ANALYSIS OF OVERLAYER S/GAAS INTERFACES WITH PHOTOEMISSION SPECTROSCOPY AND X-RAY STANDING-WAVE/, Applied surface science, 70-1, 1993, pp. 496-501
INTERFACE STRUCTURE AND CHEMICAL BONDINGS IN AL S-PASSIVATED GAAS(111)/
Authors: SUGIYAMA M MAEYAMA S SCIMECA T OSHIMA M OIGAWA H NANNICHI Y HASHIZUME H
Citation: M. Sugiyama et al., INTERFACE STRUCTURE AND CHEMICAL BONDINGS IN AL S-PASSIVATED GAAS(111)/, Applied physics letters, 63(18), 1993, pp. 2540-2542
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