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Results:
1-16
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Results: 16
Authors:
NOLAN PE
NAPPI J
POLLAK PT
Citation: Pe. Nolan et al., CLINICAL EFFICACY OF AMIODARONE, Pharmacotherapy, 18(6), 1998, pp. 127-137
Authors:
ZHANG G
OVTCHINNIKOV A
NAPPI J
SMEKALIN K
SAVOLAINEN P
PESSA M
ASONEN H
Citation: G. Zhang et al., FAR-FIELD, EFFICIENCY AND LOSS OF 980NM INGAAS GAINASP/GAINP SCH QUANTUM-WELL LASERS/, Electronics Letters, 33(6), 1997, pp. 489-491
Authors:
PESSA M
NAPPI J
SAVOLAINEN P
TOIVONEN M
MURISON R
OVTCHINNIKOV A
ASONEN H
Citation: M. Pessa et al., STATE-OF-THE-ART ALUMINUM-FREE 980-NM LASER-DIODES, Journal of lightwave technology, 14(10), 1996, pp. 2356-2361
Authors:
ZAROWITZ BJ
NAPPI J
DUKES GE
CARTER BL
BOUCHER BA
BUSSEY HI
HAK LJ
HARDIN TC
LAKE KD
OCONNELL MB
WELLS BG
ELENBAAS RM
KIRK JK
MICHAEL KA
MARKOWSKY SJ
RESTINO MR
Citation: Bj. Zarowitz et al., CRITICAL PATHWAYS - THE TIME IS HERE FOR PHARMACIST INVOLVEMENT, Pharmacotherapy, 16(4), 1996, pp. 723-733
Authors:
RAKENNUS K
UUSIMAA P
NAPPI J
SALOKATVE A
PESSA M
AHERNE T
DORAN JP
OGORMAN J
HEGARTY J
Citation: K. Rakennus et al., GROWTH OF II-VI BRAGG MIRRORS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 628-631
Authors:
TOIVONEN M
SALOKATVE A
JALONEN M
NAPPI J
ASONEN H
PESSA M
MURISON R
Citation: M. Toivonen et al., ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF 1.35 MU-M WAVELENGTH STRAINED-LAYER GALNASP QUANTUM-WELL LASER, Electronics Letters, 31(10), 1995, pp. 797-799
Authors:
TOIVONEN M
JALONEN M
SALOKATVE A
NAPPI J
SAVOLAINEN P
PESSA M
ASONEN H
Citation: M. Toivonen et al., ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF STRAINED-LAYER INGAAS GAINASP/GAINP QUANTUM-WELL LASERS (LAMBDA=980 NM)/, Applied physics letters, 67(16), 1995, pp. 2332-2334
Authors:
ZHANG G
NAPPI J
ASONEN H
PESSA M
Citation: G. Zhang et al., TENSILE-STRAINED GAASP GAINASP/GAINP QUANTUM-WELL LASERS/, IEEE photonics technology letters, 6(1), 1994, pp. 1-3
Authors:
ASONEN H
OVTCHINNIKOV A
ZHANG GD
NAPPI J
SAVOLAINEN P
PESSA M
Citation: H. Asonen et al., ALUMINUM-FREE 980-NM GAINAS GAINASP/GAINP PUMP LASERS/, IEEE journal of quantum electronics, 30(2), 1994, pp. 415-423
Authors:
ZHANG G
NAPPI J
PESSA M
Citation: G. Zhang et al., GAAS GAINASP QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 64(8), 1994, pp. 1009-1011
Authors:
NAPPI J
OVTCHINNIKOV A
ASONEN H
SAVOLAINEN P
PESSA M
Citation: J. Nappi et al., LIMITATIONS OF 2-DIMENSIONAL PASSIVE WAVE-GUIDE MODEL FOR LAMBDA=980 NM AL-FREE RIDGE-WAVE-GUIDE LASERS, Applied physics letters, 64(17), 1994, pp. 2203-2205
Authors:
ASONEN H
NAPPI J
OVTCHINNIKOV A
SAVOLAINEN P
ZHANG G
RIES R
PESSA M
Citation: H. Asonen et al., HIGH-POWER OPERATION OF ALUMINUM-FREE (LAMBDA = 0.98-MU-M) PUMP LASERFOR ERBIUM-DOPED FIBER AMPLIFIER, IEEE photonics technology letters, 5(6), 1993, pp. 589-591
Authors:
PESSA M
NAPPI J
ZHANG G
OVTCHINNIKOV A
ASONEN H
Citation: M. Pessa et al., ALUMINUM-FREE 980 NM LASER-DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 211-216
Authors:
ZHANG G
OVTCHINNIKOV A
NAPPI J
HAKKARAINEN T
ASONEN H
Citation: G. Zhang et al., GSMBE GROWTH OF GAINASP ON GAAS SUBSTRATES AND ITS APPLICATION TO 0.98 MU-M LASERS, Journal of crystal growth, 127(1-4), 1993, pp. 1033-1036
Authors:
ZHANG GD
OVTCHINNIKOV A
NAPPI J
ASONEN H
PESSA M
Citation: Gd. Zhang et al., OPTIMIZATION AND CHARACTERISTICS OF AL-FREE STRAINED-LAYER INGAAS GAINASP/GAINP SCH-QW LASERS (LAMBDA-SIMILAR-TO-980-NM) GROWN BY GAS-SOURCE MBE/, IEEE journal of quantum electronics, 29(6), 1993, pp. 1943-1949
Authors:
ZHANG G
NAPPI J
OVTCHINNIKOV A
ASONEN H
Citation: G. Zhang et al., ALUMINUM-FREE GAAS GAINASP QUANTUM-WELL LASERS/, Electronics Letters, 29(5), 1993, pp. 429-431
Risultati:
1-16
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