Authors:
NATAF G
BEAUMONT B
BOUILLE A
HAFFOUZ S
VAILLE M
GIBART P
Citation: G. Nataf et al., LATERAL OVERGROWTH OF HIGH-QUALITY GAN LAYERS ON GAN AL2O3 PATTERNED SUBSTRATES BY HALIDE VAPOR-PHASE EPITAXY/, Journal of crystal growth, 192(1-2), 1998, pp. 73-78
Authors:
BEAUMONT B
GIBART P
VAILLE M
HAFFOUZ S
NATAF G
BOUILLE A
Citation: B. Beaumont et al., LATERAL OVERGROWTH OF GAN ON PATTERNED GAN SAPPHIRE SUBSTRATE VIA SELECTIVE METAL-ORGANIC VAPOR-PHASE EPITAXY - A ROUTE TO PRODUCE SELF SUPPORTED GAN SUBSTRATES/, Journal of crystal growth, 190, 1998, pp. 97-102
Citation: G. Nataf et al., SELECTIVE GROWTH OF GAAS AND AL0.35GA0.65AS ON GAAS PATTERNED SUBSTRATES BY HCL ASSISTED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 165(1-2), 1996, pp. 1-7
Authors:
OMNES F
GUILLAUME JC
NATAF G
JAGERWALDAU G
VENNEGUES P
GIBART P
Citation: F. Omnes et al., SUBSTRATE-FREE GAAS PHOTOVOLTAIC CELLS ON PD-COATED SILICON WITH A 20-PERCENT AM1.5 EFFICIENCY, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1806-1811
Authors:
ZAHRAMAN K
GUILLAUME JC
NATAF G
BEAUMONT B
LEROUX M
GIBART P
Citation: K. Zahraman et al., HIGH-EFFICIENCY AL0.2GA0.8AS SI STACKED TANDEM SOLAR-CELLS USING EPITAXIAL LIFT-OFF/, JPN J A P 1, 33(10), 1994, pp. 5807-5810