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Results: 1-5 |
Results: 5

Authors: NATAF G BEAUMONT B BOUILLE A HAFFOUZ S VAILLE M GIBART P
Citation: G. Nataf et al., LATERAL OVERGROWTH OF HIGH-QUALITY GAN LAYERS ON GAN AL2O3 PATTERNED SUBSTRATES BY HALIDE VAPOR-PHASE EPITAXY/, Journal of crystal growth, 192(1-2), 1998, pp. 73-78

Authors: BEAUMONT B GIBART P VAILLE M HAFFOUZ S NATAF G BOUILLE A
Citation: B. Beaumont et al., LATERAL OVERGROWTH OF GAN ON PATTERNED GAN SAPPHIRE SUBSTRATE VIA SELECTIVE METAL-ORGANIC VAPOR-PHASE EPITAXY - A ROUTE TO PRODUCE SELF SUPPORTED GAN SUBSTRATES/, Journal of crystal growth, 190, 1998, pp. 97-102

Authors: NATAF G LEROUX M LAUGT SM GIBART P
Citation: G. Nataf et al., SELECTIVE GROWTH OF GAAS AND AL0.35GA0.65AS ON GAAS PATTERNED SUBSTRATES BY HCL ASSISTED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 165(1-2), 1996, pp. 1-7

Authors: OMNES F GUILLAUME JC NATAF G JAGERWALDAU G VENNEGUES P GIBART P
Citation: F. Omnes et al., SUBSTRATE-FREE GAAS PHOTOVOLTAIC CELLS ON PD-COATED SILICON WITH A 20-PERCENT AM1.5 EFFICIENCY, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1806-1811

Authors: ZAHRAMAN K GUILLAUME JC NATAF G BEAUMONT B LEROUX M GIBART P
Citation: K. Zahraman et al., HIGH-EFFICIENCY AL0.2GA0.8AS SI STACKED TANDEM SOLAR-CELLS USING EPITAXIAL LIFT-OFF/, JPN J A P 1, 33(10), 1994, pp. 5807-5810
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