Citation: K. Benaissa et A. Nathan, SILICON ANTI-RESONANT REFLECTING OPTICAL WAVE-GUIDES FOR SENSOR APPLICATIONS, Sensors and actuators. A, Physical, 65(1), 1998, pp. 33-44
Authors:
PARK B
MURTHY RVR
BENAISSA K
AFLATOONI K
NATHAN A
HORNSEY RI
CHAMBERLAIN SG
Citation: B. Park et al., EFFECT OF DEPOSITION TEMPERATURE ON THE STRUCTURAL-PROPERTIES OF N(-C-SI-H FILMS() MU), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 902-905
Citation: K. Benaissa et al., IC COMPATIBLE OPTICAL COUPLING TECHNIQUES FOR INTEGRATION OF ARROW WITH PHOTODETECTOR, Journal of lightwave technology, 16(8), 1998, pp. 1423-1432
Citation: D. Thangaraj et A. Nathan, A ROTATED MONOTONE-DIFFERENCE SCHEME FOR THE 2-DIMENSIONAL ANISOTROPIC DRIFT-DIFFUSION EQUATION, Journal of computational physics (Print), 145(1), 1998, pp. 445-461
Citation: Y. Lu et A. Nathan, METGLAS THIN-FILM WITH AS-DEPOSITED DOMAIN ALIGNMENT FOR SMART SENSORAND ACTUATOR APPLICATIONS (VOL 70, PG 526, 1997), Applied physics letters, 73(18), 1998, pp. 2690-2690
Citation: I. Langzam et al., TPA DIFFERENTIALLY AFFECTS PKC ISOFORMS IN HUMAN BLADDER-CANCER CELL-LINES OF DIVERGENT PROLIFERATIVE PROPERTIES, Molecular biology of the cell, 8, 1997, pp. 78-78
Citation: N. O et A. Nathan, EXTRACTING MOS PARAMETER VARIATIONS USING DUAL-DRAIN MOSFET OFFSET, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1084-1090
Citation: Hh. Pham et A. Nathan, RAPID EVALUATION OF THE POTENTIAL-FIELD IN 3 DIMENSIONS USING EXPONENTIAL EXPANSION, Canadian journal of physics, 75(10), 1997, pp. 689-693
Citation: Y. Lu et A. Nathan, METGLAS THIN-FILM WITH AS-DEPOSITED DOMAIN ALIGNMENT FOR SMART SENSORAND ACTUATOR APPLICATIONS, Applied physics letters, 70(4), 1997, pp. 526-528
Citation: Ri. Hornsey et al., REVERSE CURRENT TRANSIENT-BEHAVIOR IN AMORPHOUS-SILICON SCHOTTKY DIODES AT LOW BIASES, Applied physics letters, 70(24), 1997, pp. 3260-3262
Citation: K. Benaissa et A. Nathan, IC COMPATIBLE OPTOMECHANICAL PRESSURE SENSORS USING MACH-ZEHNDER INTERFEROMETRY, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1571-1582
Citation: S. Mohajerzadeh et A. Nathan, MODELING NOISE CORRELATION BEHAVIOR IN DUAL-COLLECTOR MAGNETOTRANSISTORS USING SMALL-SIGNAL EQUIVALENT-CIRCUIT ANALYSIS, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 883-888
Citation: A. Nathan, MICROSENSORS FOR PHYSICAL SIGNALS - PRINCIPLES, DEVICE DESIGN, AND FABRICATION TECHNOLOGIES, Canadian journal of physics, 74, 1996, pp. 115-130
Authors:
PORTERFIELD JG
PORTERFIELD LM
LEVINE JH
LUCERI RM
HSIA HH
ABISAMRA F
ALVAREZ L
BUXTON AE
CAMM J
CUTLER JE
FOGOROS RN
HSIA HH
JANOSIK DL
KELLY P
LEVINE JH
LUCERI RM
MANN D
MEESMANN M
MCCOWAN R
NATHAN A
PORTERFIELD JG
ROTHBART ST
STEINBERG JS
TORRES VI
TRAPPE HJ
WINTERS SL
Citation: Jg. Porterfield et al., COMPATIBILITY OF A NONTHORACOTOMY LEAD SYSTEM WITH A BIPHASIC IMPLANTABLE CARDIOVERTER-DEFIBRILLATOR, The American journal of cardiology, 77(8), 1996, pp. 586-590
Citation: A. Salim et al., MODELING OF MAGNETIC-FIELD SENSITIVITY OF BIPOLAR MAGNETOTRANSISTORS USING HSPICE, IEEE transactions on computer-aided design of integrated circuits and systems, 14(4), 1995, pp. 464-469
Citation: A. Nathan et al., TISSUE ENGINEERED PERIVASCULAR ENDOTHELIAL-CELL IMPLANTS REGULATE VASCULAR INJURY, Proceedings of the National Academy of Sciences of the United Statesof America, 92(18), 1995, pp. 8130-8134
Citation: K. Aflatooni et A. Nathan, HEAT-TRANSPORT PROPERTIES OF SEMICONDUCTORS UNDER NONUNIFORM STRESS, Applied physics letters, 66(9), 1995, pp. 1110-1111
Citation: R. Mathur et al., DEPENDENCIES AND SENSITIVITY OF TROPOSPHERIC OXIDANTS TO PRECURSOR CONCENTRATIONS OVER THE NORTHEAST UNITED-STATES - A MODEL STUDY, JOURNAL OF GEOPHYSICAL RESEARCH-ATMOSPHERES, 99(D5), 1994, pp. 10535-10552