AAAAAA
Results: 1-25/73
Authors:
BAUMANN PK
NEMANICH RJ
Citation: Pk. Baumann et Rj. Nemanich, ELECTRON-EMISSION FROM METAL-DIAMOND(100), METAL-DIAMOND(111) AND METAL-DIAMOND(110) INTERFACES, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 612-619
Authors:
SAYERS DE
GOELLER PT
BOYANOV BI
NEMANICH RJ
Citation: De. Sayers et al., IN-SITU STUDIES OF METAL-SEMICONDUCTOR INTERACTIONS WITH SYNCHROTRON-RADIATION, Journal of synchrotron radiation, 5, 1998, pp. 1050-1051
Authors:
NEMANICH RJ
GIBALA R
PHILLIPS JM
KELLEY R
Citation: Rj. Nemanich et al., MRS GOES TO WASHINGTON, MRS bulletin, 23(9), 1998, pp. 14-14
Authors:
NEMANICH RJ
BAUMANN PK
BENJAMIN MC
NAM OH
SOWERS AT
WARD BL
ADE H
DAVIS RF
Citation: Rj. Nemanich et al., ELECTRON-EMISSION PROPERTIES OF CRYSTALLINE DIAMOND AND III-NITRIDE SURFACES, Applied surface science, 132, 1998, pp. 694-703
Authors:
BAUMANN PK
NEMANICH RJ
Citation: Pk. Baumann et Rj. Nemanich, CHARACTERIZATION OF COPPER-DIAMOND(100), COPPER-DIAMOND(111), AND COPPER-DIAMOND(110) INTERFACES - ELECTRON-AFFINITY AND SCHOTTKY-BARRIER, Physical review. B, Condensed matter, 58(3), 1998, pp. 1643-1654
Authors:
GOELLER PT
BOYANOV BI
SAYERS DE
NEMANICH RJ
Citation: Pt. Goeller et al., CODEPOSITION OF COBALT DISILICIDE ON SILICON-GERMANIUM THIN-FILMS, Thin solid films, 320(2), 1998, pp. 206-210
Authors:
BAUMANN PK
NEMANICH RJ
Citation: Pk. Baumann et Rj. Nemanich, SURFACE CLEANING, ELECTRONIC STATES AND ELECTRON-AFFINITY OF DIAMOND(100), DIAMOND(111) AND DIAMOND(110) SURFACES, Surface science, 409(2), 1998, pp. 320-335
Authors:
BOYANOV BI
GOELLER PT
SAYERS DE
NEMANICH RJ
Citation: Bi. Boyanov et al., FILM THICKNESS EFFECTS IN THE CO-SI1-XGEX SOLID-PHASE REACTION, Journal of applied physics, 84(8), 1998, pp. 4285-4291
Authors:
KING SW
RONNING C
DAVIS RF
BENJAMIN MC
NEMANICH RJ
Citation: Sw. King et al., DEPENDENCE OF (0001)GAN ALN VALENCE-BAND DISCONTINUITY ON GROWTH TEMPERATURE AND SURFACE RECONSTRUCTION/, Journal of applied physics, 84(4), 1998, pp. 2086-2090
X-RAY PHOTOELECTRON DIFFRACTION FROM (3X3) AND (ROOT-3X-ROOT-3)R30-DEGREES (001)(SI) 6H-SIC SURFACES
Authors:
KING SW
RONNING C
DAVIS RF
BUSBY RS
NEMANICH RJ
Citation: Sw. King et al., X-RAY PHOTOELECTRON DIFFRACTION FROM (3X3) AND (ROOT-3X-ROOT-3)R30-DEGREES (001)(SI) 6H-SIC SURFACES, Journal of applied physics, 84(11), 1998, pp. 6042-6048
Authors:
BAUMANN PK
NEMANICH RJ
Citation: Pk. Baumann et Rj. Nemanich, ELECTRON-AFFINITY AND SCHOTTKY-BARRIER HEIGHT OF METAL-DIAMOND (100),(111), AND (110) INTERFACES, Journal of applied physics, 83(4), 1998, pp. 2072-2082
Authors:
NAM OH
BREMSER MD
WARD BL
NEMANICH RJ
DAVIS RF
Citation: Oh. Nam et al., GROWTH OF GAN AND AL0.2GA0.8N ON PATTERENED SUBSTRATES VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY, JPN J A P 2, 36(5A), 1997, pp. 532-535
AN INTEGRATED GROWTH AND ANALYSIS SYSTEM FOR IN-SITU XAS STUDIES OF METAL-SEMICONDUCTOR INTERACTIONS
Authors:
WANG Z
GOELLER PT
BOYANOV BI
SAYERS DE
NEMANICH RJ
Citation: Z. Wang et al., AN INTEGRATED GROWTH AND ANALYSIS SYSTEM FOR IN-SITU XAS STUDIES OF METAL-SEMICONDUCTOR INTERACTIONS, Journal de physique. IV, 7(C2), 1997, pp. 561-564
Authors:
BAUMANN PK
NEMANICH RJ
Citation: Pk. Baumann et Rj. Nemanich, COMPARISON OF ELECTRON-AFFINITY AND SCHOTTKY-BARRIER HEIGHT OF ZIRCONIUM AND COPPER-DIAMOND INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1236-1240
Authors:
BAUMANN PK
BOZEMAN SP
WARD BL
NEMANICH RJ
Citation: Pk. Baumann et al., CHARACTERIZATION OF METAL-DIAMOND INTERFACES - ELECTRON-AFFINITY AND SCHOTTKY-BARRIER HEIGHT, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 398-402
Authors:
MCCORMICK TL
JACKSON WE
NEMANICH RJ
Citation: Tl. Mccormick et al., THE CHARACTERIZATION OF STRAIN, IMPURITY CONTENT, AND CRUSH STRENGTH OF SYNTHETIC DIAMOND CRYSTALS, Journal of materials research, 12(1), 1997, pp. 253-263
Authors:
GOELLER PT
BOYANOV BI
SAYERS DE
NEMANICH RJ
Citation: Pt. Goeller et al., STRUCTURE AND STABILITY OF COBALT-SILICON-GERMANIUM THIN-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 133(1-4), 1997, pp. 84-89
Authors:
SHEN TD
SHMAGIN I
KOCH CC
KOLBAS RM
FAHMY Y
BERGMAN L
NEMANICH RJ
MCCLURE MT
SITAR Z
QUAN MX
Citation: Td. Shen et al., PHOTOLUMINESCENCE FROM MECHANICALLY MILLED SI AND SIO2 POWDERS, Physical review. B, Condensed matter, 55(12), 1997, pp. 7615-7623
Authors:
YANG W
JEDEMA FJ
ADE H
NEMANICH RJ
Citation: W. Yang et al., CORRELATION OF MORPHOLOGY AND ELECTRICAL-PROPERTIES OF NANOSCALE TISI2 EPITAXIAL ISLANDS ON SI(001), Thin solid films, 308, 1997, pp. 627-633
Authors:
JEON H
YOON G
NEMANICH RJ
Citation: H. Jeon et al., DEPENDENCE OF THE C49-C54 TISI2 PHASE-TRANSITION TEMPERATURE ON FILM THICKNESS AND SI SUBSTRATE ORIENTATION, Thin solid films, 299(1-2), 1997, pp. 178-182
Authors:
WANG Z
ALDRICH DB
NEMANICH RJ
SAYERS DE
Citation: Z. Wang et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF ZIRCONIUM GERMANOSILICIDE FORMED BY A BILAYER SOLID-STATE REACTION OF ZR WITH STRAINED SI1-XGEX ALLOYS, Journal of applied physics, 82(5), 1997, pp. 2342-2348
Authors:
SOWERS AT
CHRISTMAN JA
BREMSER MD
WARD BL
DAVIS RF
NEMANICH RJ
Citation: At. Sowers et al., THIN-FILMS OF ALUMINUM NITRIDE AND ALUMINUM GALLIUM NITRIDE FOR COLD-CATHODE APPLICATIONS, Applied physics letters, 71(16), 1997, pp. 2289-2291
Authors:
BERGMAN L
BREMSER MD
PERRY WG
DAVIS RF
DUTTA M
NEMANICH RJ
Citation: L. Bergman et al., RAMAN ANALYSIS OF THE CONFIGURATIONAL DISORDER IN ALXGA1-XN FILMS, Applied physics letters, 71(15), 1997, pp. 2157-2159
Authors:
MCGUIRE GE
WEISS PS
KUSHMERICK JG
JOHNSON JA
SIMKO SJ
NEMANICH RJ
PARIKH NR
CHOPRA DR
Citation: Ge. Mcguire et al., SURFACE CHARACTERIZATION, Analytical chemistry, 69(12), 1997, pp. 231-250
Authors:
NEMANICH RJ
BAUMANN PK
BENJAMIN MC
KING SW
VANDERWEIDE J
DAVIS RF
Citation: Rj. Nemanich et al., NEGATIVE ELECTRON-AFFINITY SURFACES OF ALUMINUM NITRIDE AND DIAMOND, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 790-796