Authors: BUBLIK VT EVGENEV SB KALININ AA MILVIDSKI MG NEMIROVSKI AW

Citation: Vt. Bublik et al., BEHAVIOR OF POINT RADIATION DEFECTS DURING RAPID PHOTON ANNEALING OF GAAS-LAYERS IMPLANTED WITH VARIOUS DOSES OF SI AND SE IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 221-224

Authors: DANILIN AB NEMIROVSKI AW

Citation: Ab. Danilin et Aw. Nemirovski, IMPACT OF IN-SITU PHOTOEXCITATION ON THE DEFECTIVITY OF SILICON LAYERIMPLANTED WITH DIFFERENT DOSE-RATES OF NITROGEN-IONS, Applied physics letters, 63(19), 1993, pp. 2647-2648