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Results: 26-40/40
Authors:
RAVICH YI
NEMOV SA
PROSHIN VI
Citation: Yi. Ravich et al., HOPPING CONDUCTION VIA HIGHLY LOCALIZED IMPURITY STATES OF INDIUM IN PB0.78SN0.22TE SOLID-SOLUTIONS, Semiconductors, 29(8), 1995, pp. 754-756
Authors:
ZYKOV VA
GAVRIKOVA TA
NEMOV SA
Citation: Va. Zykov et al., AMPHOTERIC BEHAVIOR OF BISMUTH IN LEAD SELENIDE FILMS, Semiconductors, 29(2), 1995, pp. 154-157
Authors:
NEMOV SA
PARFENIEV RV
POPOV DI
SHAMSHUR DV
BERESIN AV
Citation: Sa. Nemov et al., INDIUM QUASI-LOCAL LEVEL AND SUPERCONDUCTIVITY IN GEZSN1-ZTE-IN, Journal of alloys and compounds, 219, 1995, pp. 310-312
Authors:
NEMOV SA
MUSIKHIN SF
POPOV DI
PROSHIN VI
SHAMSHUR DV
Citation: Sa. Nemov et al., SUPERCONDUCTING AND ELECTROPHYSICAL PROPE RTIES OF SN1-XGEXTE-IN THIN-FILMS IN SOLID-SOLUTIONS, Fizika tverdogo tela, 37(11), 1995, pp. 3366-3373
Authors:
NEMOV SA
MUSIKHIN SF
PARFENEV RV
SVETLOV VN
POPOV DN
PROSHIN VI
SHAMSHUR DV
Citation: Sa. Nemov et al., EFFECT OF GE ADMIXTURES ON THE COMPONENT DISTRIBUTION AND SUPERCONDUCTING TRANSITION IN SN1-ZPBZTE-IN FILMS, Fizika tverdogo tela, 37(11), 1995, pp. 3523-3525
Authors:
POPOV DI
MUSIKHIN SF
NEMOV SA
PARFENEV RV
MAKAROVA TL
SVETLOV VN
Citation: Di. Popov et al., ELECTROPHYSICAL PROPERTIES AND THE DISTRI BUTION OF SN((1-Z))GEZTE-INSOLID-SOLUTION COMPONENTS IN FILMS PREPARED BY THE PULSE LASER SPRAYING TECHNIQUE, Fizika tverdogo tela, 37(1), 1995, pp. 194-205
Authors:
ABAIDULINA TG
ZHITINSKAYA MK
NEMOV SA
RAVICH YI
Citation: Tg. Abaidulina et al., EXPERIMENTAL-STUDY OF THE INTRINSIC DEFECTS IN DOPED BISMUTH TELLURIDE BY ELECTRICAL METHODS, Semiconductors, 28(9), 1994, pp. 899-900
Authors:
KAIDANOV VI
NEMOV SA
RAVICH YI
Citation: Vi. Kaidanov et al., SELF-COMPENSATION OF ELECTRICALLY ACTIVE IMPURITIES BY INTRINSIC DEFECTS IN IV-VI SEMICONDUCTORS, Semiconductors, 28(3), 1994, pp. 223-237
Authors:
RAVICH YI
NEMOV SA
PROSHIN VI
Citation: Yi. Ravich et al., SELF-COMPENSATION OF A DONOR IMPURITY BY NEUTRAL COMPLEXES IN BISMUTH-DOPED LEAD-TELLURIDE, Semiconductors, 28(2), 1994, pp. 163-165
Authors:
ZAKHAROVA IB
ZUBKOVA TI
NEMOV SA
RABIZO OV
VYDRIK VN
Citation: Ib. Zakharova et al., PHOTOSENSITIVE POLYCRYSTALLINE FILMS OF COMPENSATED LEAD-TELLURIDE PBTE-CL,TE-EX, Semiconductors, 28(10), 1994, pp. 998-1000
Authors:
MUSIKHIN SF
NEMOV SA
PROSHIN VI
SEMIN IE
SHAMSHUR DV
BEREZIN AV
IMAMKULIEV SD
Citation: Sf. Musikhin et al., ELECTRICAL-PROPERTIES OF (SN0.8GE0.2)1-XINXTE FILMS FORMED BY A LASER-EVAPORATION METHOD, Semiconductors, 27(3), 1993, pp. 288-290
Authors:
GAVRIKOVA TA
ZYKOV VA
NEMOV SA
Citation: Ta. Gavrikova et al., CHARACTERISTIC FEATURES OF SELF-COMPENSATION IN PBSE-TL-PBEX FILMS, Semiconductors, 27(2), 1993, pp. 112-114
Authors:
NEMOV SA
RAVICH YI
BEREZIN AV
GASUMYANTS VE
ZHITINSKAYA MK
PROSHIN VI
Citation: Sa. Nemov et al., TRANSPORT PHENOMENA IN PB0.78SN0.22TE WITH HIGH IN IMPURITY CONCENTRATIONS, Semiconductors, 27(2), 1993, pp. 165-168
Authors:
ZHITINSKAYA MK
NEMOV SA
RAVICH YI
ABAIDULINA TG
KOMPANEETS VV
BUSHMARINA GS
DRABKIN IA
Citation: Mk. Zhitinskaya et al., ELECTROPHYSICAL PROPERTIES OF INDIUM-DOPED BISMUTH TELLURIDE, Semiconductors, 27(10), 1993, pp. 952-954
Authors:
DAVYDOV DN
TIMOFEEV VA
GROKHOLSKII AS
RYKOV SA
NEMOV SA
ZAKHAROVA IB
Citation: Dn. Davydov et al., STUDY OF LOCAL ENERGY-SPECTRUM OF THIN SE MICONDUCTING-FILMS USING NEW CONSTRUCTION OF LOW-TEMPERATURE SCANNING TUNNEL MICROSCOPE, Pis'ma v Zurnal tehniceskoj fiziki, 19(24), 1993, pp. 31-35