Authors:
BHAT R
HONG WP
CANEAU C
KOZA MA
NGUYEN CK
GOSWAMI S
Citation: R. Bhat et al., INP GAASSB/INP AND INP/GAASSB/INGAASP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A CARBON-DOPED BASE GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 68(7), 1996, pp. 985-987