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Results: 1-8 |
Results: 8
NEUTRON REFLECTOMETRY, X-RAY REFLECTOMETRY, AND SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF THIN SIO2 ON SI
Authors: DURA JA RICHTER CA MAJKRZAK CF NGUYEN NV
Citation: Ja. Dura et al., NEUTRON REFLECTOMETRY, X-RAY REFLECTOMETRY, AND SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF THIN SIO2 ON SI, Applied physics letters, 73(15), 1998, pp. 2131-2133
ELECTRON-BEAM DEPOSITION OF ZRO2-ZNO FILMS
Authors: QADRI SB SKELTON EF LUBITZ P NGUYEN NV KHAN HR
Citation: Sb. Qadri et al., ELECTRON-BEAM DEPOSITION OF ZRO2-ZNO FILMS, Thin solid films, 291, 1996, pp. 80-83
ION-IMPLANTATION INDUCED ANOMALOUS SURFACE AMORPHIZATION IN SILICON
Authors: LOHNER T KOTAI E KHANH NQ TOTH Z FRIED M VEDAM K NGUYEN NV HANEKAMP LJ VANSILFHOUT A
Citation: T. Lohner et al., ION-IMPLANTATION INDUCED ANOMALOUS SURFACE AMORPHIZATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 335-339
DETERMINATION OF THE OPTICAL-CONSTANTS OF ZNSE FILMS BY SPECTROSCOPICELLIPSOMETRY
Authors: DAHMANI R SALAMANCARIBA L NGUYEN NV CHANDLERHOROWITZ D JONKER BT
Citation: R. Dahmani et al., DETERMINATION OF THE OPTICAL-CONSTANTS OF ZNSE FILMS BY SPECTROSCOPICELLIPSOMETRY, Journal of applied physics, 76(1), 1994, pp. 514-517
STRAIN EFFECTS ON THE ENERGY-BANDS OF ZNSE FILMS GROWN ON GAAS SUBSTRATES BY SPECTROSCOPIC ELLIPSOMETRY
Authors: DAHMANI R SALAMANCARIBA L NGUYEN NV CHANDLERHOROWITZ D JONKER BT
Citation: R. Dahmani et al., STRAIN EFFECTS ON THE ENERGY-BANDS OF ZNSE FILMS GROWN ON GAAS SUBSTRATES BY SPECTROSCOPIC ELLIPSOMETRY, Applied physics letters, 64(26), 1994, pp. 3620-3622
SPECTROSCOPIC ELLIPSOMETRY DETERMINATION OF THE PROPERTIES OF THE THIN UNDERLYING STRAINED SI LAYER AND THE ROUGHNESS AT SIO2 SI INTERFACE/
Authors: NGUYEN NV CHANDLERHOROWITZ D AMIRTHARAJ PM PELLEGRINO JG
Citation: Nv. Nguyen et al., SPECTROSCOPIC ELLIPSOMETRY DETERMINATION OF THE PROPERTIES OF THE THIN UNDERLYING STRAINED SI LAYER AND THE ROUGHNESS AT SIO2 SI INTERFACE/, Applied physics letters, 64(20), 1994, pp. 2688-2690
ION-IMPLANTATION-CAUSED SPECIAL DAMAGE PROFILES DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY IN CRYSTALLINE AND IN RELAXED (ANNEALED) AMORPHOUS-SILICON
Authors: LOHNER T FRIED M GYULAI J VEDAM K NGUYEN NV HANEKAMP LJ VANSILFHOUT A
Citation: T. Lohner et al., ION-IMPLANTATION-CAUSED SPECIAL DAMAGE PROFILES DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY IN CRYSTALLINE AND IN RELAXED (ANNEALED) AMORPHOUS-SILICON, Thin solid films, 233(1-2), 1993, pp. 117-121
INTERFACE ROUGHNESS OF SHORT-PERIOD ALAS GAAS SUPERLATTICES STUDIED BY SPECTROSCOPIC ELLIPSOMETRY
Authors: NGUYEN NV PELLEGRINO JG AMIRTHARAJ PM SEILER DG QADRI SB
Citation: Nv. Nguyen et al., INTERFACE ROUGHNESS OF SHORT-PERIOD ALAS GAAS SUPERLATTICES STUDIED BY SPECTROSCOPIC ELLIPSOMETRY, Journal of applied physics, 73(11), 1993, pp. 7739-7746
Risultati: 1-8 |