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Results: 1-8 |
Results: 8
MULTIWAFER MOVPE TECHNOLOGY FOR LOW-DIMENSIONAL GA-AL-IN-N STRUCTURES
Authors: BECCARD R NIEBUHR R WACHTENDORF B SCHMITZ D JURGENSEN H
Citation: R. Beccard et al., MULTIWAFER MOVPE TECHNOLOGY FOR LOW-DIMENSIONAL GA-AL-IN-N STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 39-43
PLASMA CLEANING AND NITRIDATION OF SAPPHIRE SUBSTRATES FOR ALXGA1-XN EPITAXY AS STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION
Authors: SEELMANNEGGEBERT M ZIMMERMANN H OBLOH H NIEBUHR R WACHTENDORF B
Citation: M. Seelmanneggebert et al., PLASMA CLEANING AND NITRIDATION OF SAPPHIRE SUBSTRATES FOR ALXGA1-XN EPITAXY AS STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2008-2015
ORIGIN OF THE Q = 11 MEV BOUND EXCITON IN GAN
Authors: KAUFMANN U MERZ C SANTIC B NIEBUHR R OBLOH H BACHEM KH
Citation: U. Kaufmann et al., ORIGIN OF THE Q = 11 MEV BOUND EXCITON IN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 109-112
TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF GAN LAYERS GROWNBY MOCVD ON SAPPHIRE
Authors: ROUVIERE JL ARLERY M NIEBUHR R BACHEM KH BRIOT O
Citation: Jl. Rouviere et al., TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF GAN LAYERS GROWNBY MOCVD ON SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 161-166
ELECTRICAL AND OPTICAL-PROPERTIES OF OXYGEN DOPED GAN GROWN BY MOCVD USING N2O
Authors: NIEBUHR R BACHEM KH KAUFMANN U MAIER M MERZ C SANTIC B SCHLOTTER P JURGENSEN H
Citation: R. Niebuhr et al., ELECTRICAL AND OPTICAL-PROPERTIES OF OXYGEN DOPED GAN GROWN BY MOCVD USING N2O, Journal of electronic materials, 26(10), 1997, pp. 1127-1130
IONIZED DONOR BOUND EXCITONS IN GAN
Authors: SANTIC B MERZ C KAUFMANN U NIEBUHR R OBLOH H BACHEM K
Citation: B. Santic et al., IONIZED DONOR BOUND EXCITONS IN GAN, Applied physics letters, 71(13), 1997, pp. 1837-1839
RESONANT RAMAN-SCATTERING IN GAN (ALGA)N SINGLE QUANTUM-WELLS/
Authors: BEHR D NIEBUHR R WAGNER J BACHEM KH KAUFMANN U
Citation: D. Behr et al., RESONANT RAMAN-SCATTERING IN GAN (ALGA)N SINGLE QUANTUM-WELLS/, Applied physics letters, 70(3), 1997, pp. 363-365
BASIC STUDIES OF GALLIUM NITRIDE GROWTH ON SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND OPTICAL-PROPERTIES OF DEPOSITED LAYERS
Authors: NIEBUHR R BACHEM K DOMBROWSKI K MAIER M PLETSCHEN W KAUFMANN U
Citation: R. Niebuhr et al., BASIC STUDIES OF GALLIUM NITRIDE GROWTH ON SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND OPTICAL-PROPERTIES OF DEPOSITED LAYERS, Journal of electronic materials, 24(11), 1995, pp. 1531-1534
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