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Results: 1-7 |
Results: 7
A SELF-ALIGNED GATE ALGAAS GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR WITH AN ION-IMPLANTED BURIED-CHANNEL FOR USE IN HIGH-EFFICIENCY POWER-AMPLIFIERS/
Authors: NISHIHORI K KITAURA Y TANABE Y MIHARA H YOSHIMURA M NITTA T KAKIUCHI Y UCHITOMI N
Citation: K. Nishihori et al., A SELF-ALIGNED GATE ALGAAS GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR WITH AN ION-IMPLANTED BURIED-CHANNEL FOR USE IN HIGH-EFFICIENCY POWER-AMPLIFIERS/, JPN J A P 1, 37(6A), 1998, pp. 3200-3204
A SELF-ALIGNED GATE GAAS-MESFET WITH P-POCKET LAYERS FOR HIGH-EFFICIENCY LINEAR POWER-AMPLIFIERS
Authors: NISHIHORI K KITAURA Y HIROSE M MIHARA M NAGAOKA M UCHITOMI N
Citation: K. Nishihori et al., A SELF-ALIGNED GATE GAAS-MESFET WITH P-POCKET LAYERS FOR HIGH-EFFICIENCY LINEAR POWER-AMPLIFIERS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1385-1392
THERMAL-ANALYSIS OF GAAS POWER MONOLITHIC MICROWAVE ICS MOUNTED WITH EPOXY ATTACHMENT
Authors: NISHIHORI K ISHIDA K KITAURA Y UCHITOMI N
Citation: K. Nishihori et al., THERMAL-ANALYSIS OF GAAS POWER MONOLITHIC MICROWAVE ICS MOUNTED WITH EPOXY ATTACHMENT, IEEE transactions on components, packaging, and manufacturing technology. Part A, 20(2), 1997, pp. 220-224
GATE CURRENT CONTROL METHOD BY PULL-DOWN FETS FOR 0-28-DB GAAS VARIABLE ATTENUATOR IN DIRECT-CONVERSION MODULATOR-IC FOR 1.9-GHZ-PHS
Authors: SASAKI T OTAKA S MAEDA T UMEDA T NISHIHORI K KAMEYAMA A HIROSE M KITAURA Y UCHITOMI N
Citation: T. Sasaki et al., GATE CURRENT CONTROL METHOD BY PULL-DOWN FETS FOR 0-28-DB GAAS VARIABLE ATTENUATOR IN DIRECT-CONVERSION MODULATOR-IC FOR 1.9-GHZ-PHS, IEICE transactions on electronics, E80C(6), 1997, pp. 794-799
A BURIED-CHANNEL SELF-ALIGNED GAAS-MESFET WITH HIGH POWER-EFFICIENCY AND LOW NOISE-FIGURE FOR 1.9-GHZ SINGLE-CHIP FRONT-END MMICS
Authors: NISHIHORI K KAMEYAMA A KITAURA Y TANABE Y MIHARA M YOSHIMURA M HIROSE M UCHITOMI N
Citation: K. Nishihori et al., A BURIED-CHANNEL SELF-ALIGNED GAAS-MESFET WITH HIGH POWER-EFFICIENCY AND LOW NOISE-FIGURE FOR 1.9-GHZ SINGLE-CHIP FRONT-END MMICS, IEICE transactions on electronics, E80C(12), 1997, pp. 1586-1591
BURIED-CHANNEL WNX W SELF-ALIGNED GAAS-MESFET PROCESS WITH SELECTIVELY IMPLANTED CHANNEL AND UNDOPED EPITAXIAL SURFACE-LAYERS FOR MMIC APPLICATIONS/
Authors: NISHIHORI K KITAURA Y NAGAOKA M TANABE Y MIHARA M YOSHIMURA M HIROSE M UCHITOMI N
Citation: K. Nishihori et al., BURIED-CHANNEL WNX W SELF-ALIGNED GAAS-MESFET PROCESS WITH SELECTIVELY IMPLANTED CHANNEL AND UNDOPED EPITAXIAL SURFACE-LAYERS FOR MMIC APPLICATIONS/, JPN J A P 1, 34(2B), 1995, pp. 1241-1245
REFRACTORY WNX W SELF-ALIGNED GATE GAAS POWER METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FOR 1.9-GHZ DIGITAL MOBILE COMMUNICATION-SYSTEM OPERATING WITH A SINGLE LOW-VOLTAGE SUPPLY/
Authors: NAGAOKA M ISHIDA K MATSUNAGA T NISHIHORI K HASHIMOTO T YOSHIMURA M TANABE Y MIHARA M KITAURA Y UCHITOMI N
Citation: M. Nagaoka et al., REFRACTORY WNX W SELF-ALIGNED GATE GAAS POWER METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FOR 1.9-GHZ DIGITAL MOBILE COMMUNICATION-SYSTEM OPERATING WITH A SINGLE LOW-VOLTAGE SUPPLY/, JPN J A P 1, 33(1B), 1994, pp. 767-770
Risultati: 1-7 |