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Results: 1-6 |
Results: 6

Authors: SOLMI S NOBILI D
Citation: S. Solmi et D. Nobili, HIGH-CONCENTRATION DIFFUSIVITY AND CLUSTERING OF ARSENIC AND PHOSPHORUS IN SILICON, Journal of applied physics, 83(5), 1998, pp. 2484-2490

Authors: SOLMI S PARISINI A ANGELUCCI R ARMIGLIATO A NOBILI D MORO L
Citation: S. Solmi et al., DOPANT AND CARRIER CONCENTRATION IN SI IN EQUILIBRIUM WITH MONOCLINICSIP PRECIPITATES, Physical review. B, Condensed matter, 53(12), 1996, pp. 7836-7841

Authors: NOBILI D SOLMI S PARISINI A ARMIGLIATO A MORO L
Citation: D. Nobili et al., RECENT FINDINGS IN SILICON DOPING WITH PHOSPHORUS, Renewable energy, 5(1-4), 1994, pp. 250-251

Authors: DERDOUR M FURLAN G NOBILI D
Citation: M. Derdour et al., AGGREGATION EQUILIBRIA IN ARSENIC DOPED SILICON, Solar energy materials and solar cells, 32(4), 1994, pp. 435-441

Authors: NOBILI D SOLMI S PARISINI A DERDOUR M ARMIGLIATO A MORO L
Citation: D. Nobili et al., PRECIPITATION, AGGREGATION, AND DIFFUSION IN HEAVILY ARSENIC-DOPED SILICON, Physical review. B, Condensed matter, 49(4), 1994, pp. 2477-2483

Authors: PARISINI A NOBILI D ARMIGLIATO A DERDOUR M MORO L SOLMI S
Citation: A. Parisini et al., HIGH-TEMPERATURE THERMAL EVOLUTION OF SIAS PRECIPITATES IN SILICON, Applied physics. A, Solids and surfaces, 54(3), 1992, pp. 221-224
Risultati: 1-6 |