Authors: BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM

Citation: Yb. Bolkhovityanov et al., LIQUID-PHASE EPITAXY OF HIGHLY STRAINED INGAASP GAAS FILMS IN THE 1.4-1.8 EV INTERVAL OF BAND-GAPS/, Journal of crystal growth, 158(3), 1996, pp. 217-223

Authors: BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM

Citation: Yb. Bolkhovityanov et al., HIGHLY STRAINED INGAASP FILMS WITH HIGH CRITICAL THICKNESSES, Journal of applied physics, 79(10), 1996, pp. 7636-7639

Authors: BOLKHOVITYANOV YB GILINSKY AM NOMEROTSKY NV TRUKHANOV EM JAROSHEVICH AS

Citation: Yb. Bolkhovityanov et al., LIQUID-PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INXGA1-XP AND INXGA1-XASYP1-Y SOLID-SOLUTIONS ON GAAS SUBSTRATES, Journal of crystal growth, 149(1-2), 1995, pp. 17-22

Authors: BOLKHOVITYANOV YB ALPEROVICH VL JAROSHEVICH AS NOMEROTSKY NV PAULISH AG TEREKHOV AS TRUKHANOV EM

Citation: Yb. Bolkhovityanov et al., LIQUID PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INGAASP LAYERS FOR SPIN-POLARIZED ELECTRON SOURCES, Journal of crystal growth, 146(1-4), 1995, pp. 310-313

Authors: BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM

Citation: Yb. Bolkhovityanov et al., INGAASP GAAS ELASTICALLY STRAINED QUATERNARY SOLID-SOLUTIONS WITH HIGH CRITICAL THICKNESSES GROWN BY LIQUID-PHASE EPITAXY/, Applied physics letters, 67(17), 1995, pp. 2486-2487