Authors: ALEKSANDROV LN NOVIKOV PL

Citation: Ln. Aleksandrov et Pl. Novikov, MECHANISMS OF FORMATION AND TOPOLOGICAL ANALYSIS OF POROUS SILICON - COMPUTATIONAL MODELING, Computational materials science, 10(1-4), 1998, pp. 406-410

Authors: ALEKSANDROV LN NOVIKOV PL

Citation: Ln. Aleksandrov et Pl. Novikov, MORPHOLOGY OF POROUS SILICON STRUCTURES FORMED BY ANODIZATION OF HEAVILY AND LIGHTLY DOPED SILICON, Thin solid films, 330(2), 1998, pp. 102-107

Authors: NOVIKOV PL ALEKSANDROV LN DVURECHENSKII AV ZINOVEV VA

Citation: Pl. Novikov et al., MECHANISM OF SILICON EPITAXY ON POROUS SILICON LAYERS, JETP letters, 67(7), 1998, pp. 539-544

Authors: ALEKSANDROV LN NOVIKOV PL

Citation: Ln. Aleksandrov et Pl. Novikov, SIMULATION OF THE FORMATION OF POROUS-SILICON STRUCTURES, JETP letters, 65(9), 1997, pp. 714-719

Authors: ALEKSANDROV LN NOVIKOV PL

Citation: Ln. Aleksandrov et Pl. Novikov, KINETICS OF PHASE-TRANSITIONS IN POROUS MATERIALS, Physica status solidi. a, Applied research, 158(2), 1996, pp. 419-426