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Authors: NUTSCH A DAHLHEIMER B DOHR N KRATZER H LUKAS R TORABI B TRANKLE G ABSTREITER G WEIMANN G

Citation: A. Nutsch et al., CHEMICAL BEAM EPITAXY OF INTEGRATED 1.55 MU-M LASERS ON EXACT AND MISORIENTED (100)-INP SUBSTRATES, Journal of crystal growth, 188(1-4), 1998, pp. 275-280

Authors: NUTSCH A KRATZER H TORABI B TRANKLE G ABSTREITER G WEIMANN G

Citation: A. Nutsch et al., CHEMICAL BEAM EPITAXY OF GAINASP FOR LONG-WAVELENGTH LASERS, Journal of crystal growth, 183(4), 1998, pp. 505-510

Authors: KRATZER H NUTSCH A TORABI B TRANKLE G WEIMANN G

Citation: H. Kratzer et al., CBE GROWN (GAIN)(ASP) LASER-DIODES FOR MONOLITHIC INTEGRATION, JPN J A P 1, 36(3B), 1997, pp. 1880-1883

Authors: FURST C LEITENSTORFER A NUTSCH A TRANKLE G ZRENNER A

Citation: C. Furst et al., ULTRAFAST RABI OSCILLATIONS OF FREE-CARRIER TRANSITIONS IN INP, Physica status solidi. b, Basic research, 204(1), 1997, pp. 20-22

Authors: NUTSCH A TORABI B KRATZER H TRANKLE G WEIMANN G

Citation: A. Nutsch et al., CBE OF 1.55 MU-M (GAIN)(ASP) LASERS FOR MONOLITHIC INTEGRATION, Journal of crystal growth, 175, 1997, pp. 1200-1204