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Results:
1-11
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Results: 11
Authors:
GRANDIDIER B
STIEVENARD D
NYS JP
WALLART X
Citation: B. Grandidier et al., MICROSCOPIC BEHAVIOR OF SILICON IN SILICON DELTA-DOPED LAYER IN GAAS, Applied physics letters, 72(19), 1998, pp. 2454-2456
Authors:
TETELIN C
WALLART X
STIEVENARD D
NYS JP
GRAVESTEIJN DJ
Citation: C. Tetelin et al., EVIDENCE OF GE ISLAND FORMATION DURING THERMAL ANNEALING OF SIGE ALLOYS - COMBINED ATOMIC-FORCE MICROSCOPY AND AUGER-ELECTRON SPECTROSCOPY STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 137-141
Authors:
GRANDIDIER B
NYS JP
STIEVENARD D
DELABROISE X
DELERUE C
LANNOO M
Citation: B. Grandidier et al., STM MEASUREMENTS OF BARRIER HEIGHT ON SI(111)-7X7 AND GAAS(110) CLEAVED SURFACES USING I(Z), Z(V) AND I(Z(V),V) TECHNIQUES, Applied physics A: Materials science & processing, 66, 1998, pp. 977-980
Authors:
TETELIN C
WALLART X
NYS JP
VESCAN L
GRAVESTEIJN DJ
Citation: C. Tetelin et al., KINETICS AND MECHANISM OF LOW-TEMPERATURE ATOMIC OXYGEN-ASSISTED OXIDATION OF SIGE LAYERS, Journal of applied physics, 83(5), 1998, pp. 2842-2846
Authors:
LEGRAND B
GRANDIDIER B
NYS JP
STIEVENARD D
GERARD JM
THIERRYMIEG V
Citation: B. Legrand et al., SCANNING-TUNNELING-MICROSCOPY AND SCANNING TUNNELING SPECTROSCOPY OF SELF-ASSEMBLED INAS QUANTUM DOTS, Applied physics letters, 73(1), 1998, pp. 96-98
Authors:
STIEVENARD D
GRANDIDIER B
NYS JP
DELABROISE X
DELERUE C
LANNOO M
Citation: D. Stievenard et al., INFLUENCE OF BARRIER HEIGHT ON SCANNING TUNNELING SPECTROSCOPY EXPERIMENTAL AND THEORETICAL ASPECTS, Applied physics letters, 72(5), 1998, pp. 569-571
Authors:
TETELIN C
WALLART X
VESCAN L
NYS JP
Citation: C. Tetelin et al., PLASMA-ASSISTED OXIDATION OF SIGE LAYERS AT 500-DEGREES-C - INTERFACECHARACTERIZATION, Applied surface science, 104, 1996, pp. 385-391
Authors:
TETELIN C
WALLART X
NYS JP
VESCAN L
Citation: C. Tetelin et al., GERMANIUM BEHAVIOR DURING THE LOW-TEMPERATURE PLASMA-ASSISTED OXIDATION OF SIGE ALLOYS, Surface and interface analysis, 23(6), 1995, pp. 363-366
Authors:
WALLART X
NYS JP
TETELIN C
Citation: X. Wallart et al., GROWTH OF ULTRATHIN IRON SILICIDE FILMS - OBSERVATION OF THE GAMMA-FESI2 PHASE BY ELECTRON SPECTROSCOPIES, Physical review. B, Condensed matter, 49(8), 1994, pp. 5714-5717
Authors:
ANDRE JP
ALAOUI H
DESWARTE A
ZHENG Y
PETROFF JF
WALLART X
NYS JP
Citation: Jp. Andre et al., IRON SILICIDE GROWTH ON SI(111) SUBSTRATE USING THE METALORGANIC VAPOR-PHASE EPITAXY PROCESS, Journal of crystal growth, 144(1-2), 1994, pp. 29-40
Authors:
WALLART X
NYS JP
DEHAESE O
VINCENT G
Citation: X. Wallart et al., STUDY OF THE EPITAXY OF BETA-FESI2 BY CODEPOSITION OF FE AND SI ON SI(111), Applied surface science, 70-1, 1993, pp. 598-602
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1-11
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