AAAAAA

   
Results: 1-25 | 26-32
Results: 1-25/32

Authors: Page, H Robertson, A Sirtori, C Becker, C Glastre, G Nagle, J
Citation: H. Page et al., Demonstration of (gimel approximate to 11.5-mu m) GaAs-based quantum cascade laser operating on a peltier cooled element, IEEE PHOTON, 13(6), 2001, pp. 556-558

Authors: Stellmacher, M Bisaro, R Galtier, P Nagle, J Khirouni, K Bourgoin, JC
Citation: M. Stellmacher et al., Defects and defect behaviour in GaAs grown at low temperature, SEMIC SCI T, 16(6), 2001, pp. 440-446

Authors: Nagle, J
Citation: J. Nagle, Blonde, AM BOOK REV, 22(3), 2001, pp. 26

Authors: Nagle, J
Citation: J. Nagle, The mammoth book of short erotic novels, AM BOOK REV, 22(2), 2001, pp. 22

Authors: Barbieri, S Sirtori, C Page, H Stellmacher, M Nagle, J
Citation: S. Barbieri et al., Design strategies for GaAs-based unipolar lasers: Optimum injector-active region coupling via resonant tunneling, APPL PHYS L, 78(3), 2001, pp. 282-284

Authors: Leo, G Secondini, M Morabito, M De Rossi, A Assanto, G Fiore, A Berger, V Calligaro, M Nagle, J
Citation: G. Leo et al., Birefringence evaluation of multimode multilayer AlGaAs/AlAs waveguides, APPL PHYS L, 78(11), 2001, pp. 1472-1474

Authors: Sun, M Goldin, E Stahl, S Falardeau, JL Kennedy, JC Acierno, JS Bove, C Kaneski, CR Nagle, J Bromley, MC Colman, M Schiffmann, R Slaugenhaupt, SA
Citation: M. Sun et al., Mucolipidosis type IV is caused by mutations in a gene encoding a novel transient receptor potential channel, HUM MOL GEN, 9(17), 2000, pp. 2471-2478

Authors: Wardman, L Rout, BJ Ormiston, P Nagle, J Munshi, S Kirby, A Jones, I Hearn, G Hamilton, S Chan, KK
Citation: L. Wardman et al., Patients' knowledge and expectations of confidentiality in primary health care: a quantitative study, BR J GEN PR, 50(460), 2000, pp. 901-902

Authors: Puech, P Toufella, M Carles, R Sirvin, R Bedel, E Fontaine, C Stellmacher, M Bisaro, R Nagle, J Claverie, A Benassayag, G
Citation: P. Puech et al., Non-stoichiometry in (001) low temperature GaAs by Raman spectroscopy, J PHYS-COND, 12(13), 2000, pp. 2895-2902

Authors: Page, H Sirtori, C Barbier, S Kruck, P Stellmacher, M Nagle, J
Citation: H. Page et al., Design and operation of mid-infrared light-emitting devices (lambda approximate to 11 mu m) based on a chirped superlattice, SEMIC SCI T, 15(1), 2000, pp. 44-50

Authors: Waziri, A Soldan, SS Graf, MD Nagle, J Jacobson, S
Citation: A. Waziri et al., Characterization and sequencing of prototypic human T-lymphotropic virus type 1 (HTLV-1) from an HTLV-1/2 seroindeterminate patient, J VIROLOGY, 74(5), 2000, pp. 2178-2185

Authors: Stellmacher, M Nagle, J Lampin, JF Santoro, P Vaneecloo, J Alexandrou, A
Citation: M. Stellmacher et al., Dependence of the carrier lifetime on acceptor concentration in GaAs grownat low-temperature under different growth and annealing conditions, J APPL PHYS, 88(10), 2000, pp. 6026-6031

Authors: Barbieri, S Sirtori, C Page, H Beck, M Faist, J Nagle, J
Citation: S. Barbieri et al., Gain measurements on GaAs-based quantum cascade lasers using a two-sectioncavity technique, IEEE J Q EL, 36(6), 2000, pp. 736-741

Authors: Becker, C Sirtori, C Page, H Glastre, G Ortiz, V Marcadet, X Stellmacher, M Nagle, J
Citation: C. Becker et al., AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuity, APPL PHYS L, 77(4), 2000, pp. 463-465

Authors: Kruck, P Page, H Sirtori, C Barbieri, S Stellmacher, M Nagle, J
Citation: P. Kruck et al., Improved temperature performance of Al0.33Ga0.67As/GaAs quantum-cascade lasers with emission wavelength at lambda approximate to 11 mu m, APPL PHYS L, 76(23), 2000, pp. 3340-3342

Authors: Eickemeyer, F Kaindl, RA Woerner, M Elsaesser, T Barbieri, S Kruck, P Sirtori, C Nagle, J
Citation: F. Eickemeyer et al., Large electrically induced transmission changes of GaAs/AlGaAs quantum-cascade structures, APPL PHYS L, 76(22), 2000, pp. 3254-3256

Authors: Nagle, J
Citation: J. Nagle, Post-communist party systems: Competition, representation, and inter-partycooperation., AM POLI SCI, 94(2), 2000, pp. 484-485

Authors: Sirtori, C Barbieri, S Kruck, P Piazza, V Beck, M Faist, J Oesterle, U Collot, P Nagle, J
Citation: C. Sirtori et al., Influence of DX centers on the performance of unipolar semiconductor lasers based on GaAs-AlxGa1-xAs, IEEE PHOTON, 11(9), 1999, pp. 1090-1092

Authors: Bourgoin, JC Hammadi, H Stellmacher, M Nagle, J Grandidier, B Stievenard, D Nys, JP Delerue, C Lannoo, M
Citation: Jc. Bourgoin et al., As antisite incorporation in epitaxial growth of GaAs, PHYSICA B, 274, 1999, pp. 725-728

Authors: Leo, G Berger, V Owyang, C Nagle, J
Citation: G. Leo et al., Parametric fluorescence in oxidized AlGaAs waveguides, J OPT SOC B, 16(9), 1999, pp. 1597-1602

Authors: Nagle, J
Citation: J. Nagle, A 'good cuntboy is hard to find', AM BOOK REV, 20(6), 1999, pp. 18-18

Authors: Khirouni, K Stellmacher, M Nagle, J Bourgoin, JC
Citation: K. Khirouni et al., Electron conduction in low temperature grown GaAs, SOL ST ELEC, 43(3), 1999, pp. 589-597

Authors: Stellmacher, M Berger, V Sirtori, C Nagle, J
Citation: M. Stellmacher et al., Electronic lifetime engineering using low-temperature GaAs in a quantum well structure, J CRYST GR, 202, 1999, pp. 206-211

Authors: Marcadet, X Fily, A Collin, S Landesman, JP Larive, M Olivier, J Nagle, J
Citation: X. Marcadet et al., Indium surface segregation in strained GaInAs quantum wells grown on ((1)over-bar (1)over-bar (1)over-bar) GaAs substrates by MBE, J CRYST GR, 202, 1999, pp. 284-289

Authors: Garcia, JC Rosencher, E Collot, P Laurent, N Guyaux, JL Nagle, J Chirlias, E
Citation: Jc. Garcia et al., Epitaxially stacked GaAs GaAlAs lasers using a low-resistance tunnel junction, J CRYST GR, 202, 1999, pp. 891-895
Risultati: 1-25 | 26-32