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Citation: H. Page et al., Design and operation of mid-infrared light-emitting devices (lambda approximate to 11 mu m) based on a chirped superlattice, SEMIC SCI T, 15(1), 2000, pp. 44-50
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Citation: A. Waziri et al., Characterization and sequencing of prototypic human T-lymphotropic virus type 1 (HTLV-1) from an HTLV-1/2 seroindeterminate patient, J VIROLOGY, 74(5), 2000, pp. 2178-2185
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Authors:
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Citation: S. Barbieri et al., Gain measurements on GaAs-based quantum cascade lasers using a two-sectioncavity technique, IEEE J Q EL, 36(6), 2000, pp. 736-741
Authors:
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Citation: C. Becker et al., AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuity, APPL PHYS L, 77(4), 2000, pp. 463-465
Authors:
Kruck, P
Page, H
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Citation: P. Kruck et al., Improved temperature performance of Al0.33Ga0.67As/GaAs quantum-cascade lasers with emission wavelength at lambda approximate to 11 mu m, APPL PHYS L, 76(23), 2000, pp. 3340-3342
Authors:
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Citation: F. Eickemeyer et al., Large electrically induced transmission changes of GaAs/AlGaAs quantum-cascade structures, APPL PHYS L, 76(22), 2000, pp. 3254-3256
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Citation: C. Sirtori et al., Influence of DX centers on the performance of unipolar semiconductor lasers based on GaAs-AlxGa1-xAs, IEEE PHOTON, 11(9), 1999, pp. 1090-1092
Authors:
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Citation: M. Stellmacher et al., Electronic lifetime engineering using low-temperature GaAs in a quantum well structure, J CRYST GR, 202, 1999, pp. 206-211