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Results:
1-8
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Results: 8
Authors:
Tok, ES
Zhang, J
Kamiya, I
Xie, MH
Neave, JH
Joyce, BA
Citation: Es. Tok et al., Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries, SURF REV L, 8(5), 2001, pp. 509-511
Authors:
Joyce, PB
Krzyzewski, TJ
Steans, PH
Bell, GR
Neave, JH
Jones, TS
Citation: Pb. Joyce et al., Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots, SURF SCI, 492(3), 2001, pp. 345-353
Authors:
Pashley, DW
Neave, JH
Joyce, BA
Citation: Dw. Pashley et al., A model for the appearance of chevrons on RHEED patterns from InAs quantumdots, SURF SCI, 476(1-2), 2001, pp. 35-42
Authors:
Williams, RS
Ashwin, MJ
Neave, JH
Jones, TS
Citation: Rs. Williams et al., Optimising the growth of pyramidal GaAs microstructures on pre-patterned GaAs(001) substrates, J CRYST GR, 227, 2001, pp. 56-61
Authors:
Pritchard, RE
Oulton, RF
Stavrinou, PN
Parry, G
Williams, RS
Ashwin, MJ
Neave, JH
Jones, TS
Citation: Re. Pritchard et al., Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates, J APPL PHYS, 90(1), 2001, pp. 475-480
Authors:
Steans, PH
Neave, JH
Bell, GR
Zhang, J
Joyce, BA
Jones, TS
Citation: Ph. Steans et al., A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films, SURF SCI, 459(3), 2000, pp. 277-286
Authors:
Bell, GR
Jones, TS
Neave, JH
Joyce, BA
Citation: Gr. Bell et al., Quantitative comparison of surface morphology and reflection high-energy electron diffraction intensity for epitaxial growth on GaAs, SURF SCI, 458(1-3), 2000, pp. 247-256
Authors:
Steans, PH
Neave, JH
Zhang, J
Tok, ES
Bell, GR
Joyce, BA
Jones, TS
Citation: Ph. Steans et al., Re-entrant behaviour in GaAs(111)A homoepitaxy, J CRYST GR, 202, 1999, pp. 198-201
Risultati:
1-8
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