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Results: 1-9 |
Results: 9
Transport properties of epitaxial Fe-GaN-Fe tunnel junctions on GaAs
Authors: Boeve, H Nemeth, S Liu, Z De Boeck, J Borghs, G
Citation: H. Boeve et al., Transport properties of epitaxial Fe-GaN-Fe tunnel junctions on GaAs, J MAGN MAGN, 226, 2001, pp. 933-935
Ecological risk assessment framework for low-altitude aircraft overflights: I. Planning the analysis and estimating exposure
Authors: Efroymson, RA Suter, GW Rose, WH Nemeth, S
Citation: Ra. Efroymson et al., Ecological risk assessment framework for low-altitude aircraft overflights: I. Planning the analysis and estimating exposure, RISK ANAL, 21(2), 2001, pp. 251-262
Growth and tunneling spectroscopy study of Fe/(GaAs,AlAs)/Ga1-xMnxAs ferromagnet/semiconductor heterostructures
Authors: Liu, ZY Boeve, H Van Roy, W Nemeth, S Moshchalkov, VV Borghs, G De Boeck, J
Citation: Zy. Liu et al., Growth and tunneling spectroscopy study of Fe/(GaAs,AlAs)/Ga1-xMnxAs ferromagnet/semiconductor heterostructures, J CRYST GR, 227, 2001, pp. 867-873
Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE usingECR microwave plasma nitrogen source
Authors: Nemeth, S Boeve, H Liu, ZY Attenborough, K Bender, H Nistor, L Borghs, G De Boeck, J
Citation: S. Nemeth et al., Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE usingECR microwave plasma nitrogen source, J CRYST GR, 227, 2001, pp. 888-892
The vacuum wafer bonding technique as an alternative method for the fabrication of metal/semiconductor heterostructures
Authors: Dessein, K Kumar, PSA Nemeth, S Delaey, L Borghs, G De Boeck, J
Citation: K. Dessein et al., The vacuum wafer bonding technique as an alternative method for the fabrication of metal/semiconductor heterostructures, J CRYST GR, 227, 2001, pp. 906-910
Fluorescence x-ray absorption fine structure study on local structures around Fe atoms heavily doped in GaN by low-temperature molecular-beam epitaxy
Authors: Ofuchi, H Oshima, M Tabuchi, M Takeda, Y Akinaga, H Nemeth, S De Boeck, J Borghs, G
Citation: H. Ofuchi et al., Fluorescence x-ray absorption fine structure study on local structures around Fe atoms heavily doped in GaN by low-temperature molecular-beam epitaxy, APPL PHYS L, 78(17), 2001, pp. 2470-2472
Effect of mixing enthalpy on relaxed and strained growth of III-(VyV1-yII)-V-I compound alloys using molecular-beam epitaxy
Authors: Genoe, J Nemeth, S Grietens, B Behet, M Vounckx, R Borghs, G
Citation: J. Genoe et al., Effect of mixing enthalpy on relaxed and strained growth of III-(VyV1-yII)-V-I compound alloys using molecular-beam epitaxy, J APPL PHYS, 87(1), 2000, pp. 564-571
Growth and characterization of low-temperature grown GaN with high Fe doping
Authors: Akinaga, H Nemeth, S De Boeck, J Nistor, L Bender, H Borghs, G Ofuchi, H Oshima, M
Citation: H. Akinaga et al., Growth and characterization of low-temperature grown GaN with high Fe doping, APPL PHYS L, 77(26), 2000, pp. 4377-4379
Study of a polymeric network by dynamic fluorescence quenching using a blob model
Authors: Vangani, V Duhamel, J Nemeth, S Jao, TC
Citation: V. Vangani et al., Study of a polymeric network by dynamic fluorescence quenching using a blob model, MACROMOLEC, 32(9), 1999, pp. 2845-2854
Risultati: 1-9 |