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Results:
1-16
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Results: 16
Authors:
Ng, HM
Chu, SNG
Cho, AY
Citation: Hm. Ng et al., In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells, J VAC SCI A, 19(1), 2001, pp. 292-294
Authors:
Ng, HM
Harel, R
Chu, SNG
Cho, AY
Citation: Hm. Ng et al., The effect of built-in electric field in GaN/AlGaN quantum wells with highAlN mole fraction, J ELEC MAT, 30(3), 2001, pp. 134-137
Authors:
Cho, AY
Sivco, DL
Ng, HM
Gmachl, C
Tredicucci, A
Hutchinson, AL
Chu, SNG
Capasso, F
Citation: Ay. Cho et al., Quantum devices, MBE technology for the 21st century, J CRYST GR, 227, 2001, pp. 1-7
Authors:
Moustakas, TD
Iliopoulos, E
Sampath, AV
Ng, HM
Doppalapudi, D
Misra, M
Korakakis, D
Singh, R
Citation: Td. Moustakas et al., Growth and device applications of III-nitrides by MBE, J CRYST GR, 227, 2001, pp. 13-20
Authors:
Gmachl, C
Frolov, SV
Ng, HM
Chu, SNG
Cho, AY
Citation: C. Gmachl et al., Sub-picosecond electron scattering time for lambda similar or equal to 1.55 mu m intersubband transitions in GaN/AlGaN multiple quantum wells, ELECTR LETT, 37(6), 2001, pp. 378-380
Authors:
Gmachl, C
Ng, HM
Cho, AY
Citation: C. Gmachl et al., Intersubband absorption in degenerately doped GaN/AlxGa1-xN coupled doublequantum wells, APPL PHYS L, 79(11), 2001, pp. 1590-1592
Authors:
Sampath, AV
Misra, M
Seth, K
Fedyunin, Y
Ng, HM
Iliopoulos, E
Feit, Z
Moustakas, TD
Citation: Av. Sampath et al., A comparative study of GaN diodes grown by MBE on sapphire and HVPE-GaN/sapphire substrates., MRS I J N S, 5, 2000, pp. NIL_497-NIL_502
Authors:
Hong, M
Anselm, KA
Kwo, J
Ng, HM
Baillargeon, JN
Kortan, AR
Mannaerts, JP
Cho, AY
Lee, CM
Chyi, JI
Lay, TS
Citation: M. Hong et al., Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes, J VAC SCI B, 18(3), 2000, pp. 1453-1456
Authors:
Ng, HM
Moustakas, TD
Ludwig, KF
Citation: Hm. Ng et al., Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1457-1460
Authors:
Ng, HM
Gmachl, C
Chu, SNG
Cho, AY
Citation: Hm. Ng et al., Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 mu m intersubband transitions, J CRYST GR, 220(4), 2000, pp. 432-438
Authors:
Gmachl, C
Ng, HM
Cho, AY
Citation: C. Gmachl et al., Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of lambda similar to 1.75-4.2 mu m, APPL PHYS L, 77(3), 2000, pp. 334-336
Authors:
Gmachl, C
Ng, HM
Chu, SNG
Cho, AY
Citation: C. Gmachl et al., Intersubband absorption at lambda similar to 1.55 mu m in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers, APPL PHYS L, 77(23), 2000, pp. 3722-3724
Authors:
Ng, HM
Moustakas, TD
Chu, SNG
Citation: Hm. Ng et al., High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectorsgrown by molecular-beam epitaxy, APPL PHYS L, 76(20), 2000, pp. 2818-2820
Authors:
Ng, HM
Doppalapudi, D
Iliopoulos, E
Moustakas, TD
Citation: Hm. Ng et al., Distributed Bragg reflectors based on AlN/GaN multilayers, APPL PHYS L, 74(7), 1999, pp. 1036-1038
Authors:
Ng, HM
Doppalapudi, D
Iliopoulos, E
Moustakas, TD
Citation: Hm. Ng et al., Distributed Bragg reflectors based on AlN/GaN multilayers (vol 74, pg 1036, 1999), APPL PHYS L, 74(26), 1999, pp. 4070-4070
Authors:
Misra, M
Korakakis, D
Ng, HM
Moustakas, TD
Citation: M. Misra et al., Photoconductive detectors based on partially ordered AlxGa1-xN alloys grown by molecular beam epitaxy, APPL PHYS L, 74(15), 1999, pp. 2203-2205
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