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Results: 1-14 |
Results: 14
Analysis of high-power devices using proton beam induced charge microscopy
Authors: Zmeck, M Phang, J Bettiol, A Osipowicz, T Watt, F Balk, L Niedernostheide, FJ Schulze, HJ Falck, E
Citation: M. Zmeck et al., Analysis of high-power devices using proton beam induced charge microscopy, MICROEL REL, 41(9-10), 2001, pp. 1519-1524
Self-protection functions in direct light-triggered high-power thyristors
Authors: Niedernostheide, FJ Schulze, HJ Kellner-Werdehausen, U
Citation: Fj. Niedernostheide et al., Self-protection functions in direct light-triggered high-power thyristors, MICROELEC J, 32(5-6), 2001, pp. 457-461
Carrier lifetime analysis by photoconductance decay and free carrier absorption measurements
Authors: Schulze, HJ Frohnmeyer, A Niedernostheide, FJ Hille, F Tutto, P Pavelka, T Wachutka, G
Citation: Hj. Schulze et al., Carrier lifetime analysis by photoconductance decay and free carrier absorption measurements, J ELCHEM SO, 148(11), 2001, pp. G655-G661
Hybrid hardware for a highly parallel search in the context of learning classifiers
Authors: Bode, M Freyd, O Fischer, J Niedernostheide, FJ Schulze, HJ
Citation: M. Bode et al., Hybrid hardware for a highly parallel search in the context of learning classifiers, ARTIF INTEL, 130(1), 2001, pp. 75-84
Current filament patterns in n-GaAs layers with different contact geometries
Authors: Hirschinger, J Niedernostheide, FJ Prettl, W Novak, V
Citation: J. Hirschinger et al., Current filament patterns in n-GaAs layers with different contact geometries, PHYS REV B, 61(3), 2000, pp. 1952-1958
Solitary current-density patterns in thin ZnS : Mn films
Authors: Zuccaro, S Niedernostheide, FJ Kukuk, B Strych, M Purwins, HG
Citation: S. Zuccaro et al., Solitary current-density patterns in thin ZnS : Mn films, PHYS REV E, 62(1), 2000, pp. 1284-1289
Microwave-induced patterns in n-GaAs and their photoluminescence imaging
Authors: Bel'kov, VV Hirschinger, J Schowalter, D Niedernostheide, FJ Ganichev, SD Prettl, W Mac Mathuna, D Novak, V
Citation: Vv. Bel'Kov et al., Microwave-induced patterns in n-GaAs and their photoluminescence imaging, PHYS REV B, 61(20), 2000, pp. 13698-13702
Energy levels of defects in electroluminescent ZnS : Mn thin films exhibiting hysteresis and self-organized patterns
Authors: Vlasenko, NA Denisova, ZL Veligura, LI Zuccaro, S Niedernostheide, FJ Purwins, HG
Citation: Na. Vlasenko et al., Energy levels of defects in electroluminescent ZnS : Mn thin films exhibiting hysteresis and self-organized patterns, J CRYST GR, 214, 2000, pp. 944-949
Analytical tools for the characterization of power devices
Authors: Schulze, HJ Frohnmeyer, A Niedernostheide, FJ Simmnacher, B Kolbesen, BO Tutto, P Pavelka, T Wachutka, G
Citation: Hj. Schulze et al., Analytical tools for the characterization of power devices, J ELCHEM SO, 147(10), 2000, pp. 3879-3888
Mechanisms of spatial current-density instabilities in p(+)-p(-)-n-p(+)-n(++) structures
Authors: Gorbatyuk, AV Niedernostheide, FJ
Citation: Av. Gorbatyuk et Fj. Niedernostheide, Mechanisms of spatial current-density instabilities in p(+)-p(-)-n-p(+)-n(++) structures, PHYS REV B, 59(20), 1999, pp. 13157-13169
Spatiotemporal dynamics of current-density filaments in a periodically driven multilayered semiconductor device
Authors: Niedernostheide, FJ Kleinkes, M
Citation: Fj. Niedernostheide et M. Kleinkes, Spatiotemporal dynamics of current-density filaments in a periodically driven multilayered semiconductor device, PHYS REV B, 59(11), 1999, pp. 7663-7668
Pattern formation in semiconductors
Authors: Bel'kov, VV Hirschinger, J Novak, V Niedernostheide, FJ Ganichev, SD Prettl, W
Citation: Vv. Bel'Kov et al., Pattern formation in semiconductors, NATURE, 397(6718), 1999, pp. 398-398
Thermal characterization of power devices by scanning thermal microscopy techniques
Authors: Fiege, GBM Niedernostheide, FJ Schulze, HJ Barthelmess, R Balk, LJ
Citation: Gbm. Fiege et al., Thermal characterization of power devices by scanning thermal microscopy techniques, MICROEL REL, 39(6-7), 1999, pp. 1149-1152
Direct experimental observation of the Hall angle in the low-temperature breakdown regime of n-GaAs
Authors: Novak, V Hirschinger, J Niedernostheide, FJ Prettl, W Cukr, M Oswald, J
Citation: V. Novak et al., Direct experimental observation of the Hall angle in the low-temperature breakdown regime of n-GaAs, PHYS REV B, 58(19), 1998, pp. 13099-13102
Risultati: 1-14 |