Authors:
Qi, WJ
Nieh, R
Lee, BH
Kang, LG
Jeon, Y
Lee, JC
Citation: Wj. Qi et al., Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application, APPL PHYS L, 77(20), 2000, pp. 3269-3271
Authors:
Qi, WJ
Nieh, R
Dharmarajan, E
Lee, BH
Jeon, Y
Kang, LG
Onishi, K
Lee, JC
Citation: Wj. Qi et al., Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application, APPL PHYS L, 77(11), 2000, pp. 1704-1706
Citation: Bh. Lee et al., Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing, APPL PHYS L, 76(14), 2000, pp. 1926-1928