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Results: 5

Authors: Kang, L Lee, BH Qi, WJ Jeon, Y Nieh, R Gopalan, S Onishi, K Lee, JC
Citation: L. Kang et al., Electrical characteristics of highly reliable ultrathin hafnium oxide gatedielectric, IEEE ELEC D, 21(4), 2000, pp. 181-183

Authors: Busch, BW Schulte, WH Garfunkel, E Gustafsson, T Qi, W Nieh, R Lee, J
Citation: Bw. Busch et al., Oxygen exchange and transport in thin zirconia films on Si(100), PHYS REV B, 62(20), 2000, pp. R13290-R13293

Authors: Qi, WJ Nieh, R Lee, BH Kang, LG Jeon, Y Lee, JC
Citation: Wj. Qi et al., Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application, APPL PHYS L, 77(20), 2000, pp. 3269-3271

Authors: Qi, WJ Nieh, R Dharmarajan, E Lee, BH Jeon, Y Kang, LG Onishi, K Lee, JC
Citation: Wj. Qi et al., Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application, APPL PHYS L, 77(11), 2000, pp. 1704-1706

Authors: Lee, BH Kang, LG Nieh, R Qi, WJ Lee, JC
Citation: Bh. Lee et al., Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing, APPL PHYS L, 76(14), 2000, pp. 1926-1928
Risultati: 1-5 |