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Results: 1-12 |
Results: 12
Mechanism of the current flow in Pd-(heavily doped p-AlxGa1-xN) ohmic contact
Authors: Blank, TV Goldberg, YA Kalinina, EV Konstantinov, OV Nikolaev, AE Fomin, AV Cherenkov, AE
Citation: Tv. Blank et al., Mechanism of the current flow in Pd-(heavily doped p-AlxGa1-xN) ohmic contact, SEMICONDUCT, 35(5), 2001, pp. 529-532
Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Nikolaev, AE Nikitina, IP Dmitriev, VA
Citation: Ay. Polyakov et al., Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy, SOL ST ELEC, 45(2), 2001, pp. 249-253
Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Nikolaev, AE Nikitina, IP Dmitriev, VA
Citation: Ay. Polyakov et al., Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates, SOL ST ELEC, 45(2), 2001, pp. 261-265
Fermi level dependence of hydrogen diffusivity in GaN
Authors: Polyakov, AY Smirnov, NB Pearton, SJ Ren, F Theys, B Jomard, F Teukam, Z Dmitriev, VA Nikolaev, AE Usikov, AS Nikitina, IP
Citation: Ay. Polyakov et al., Fermi level dependence of hydrogen diffusivity in GaN, APPL PHYS L, 79(12), 2001, pp. 1834-1836
Statistical Ga clusters and A(1)(TO) gap mode in AlxGa1-xN alloys
Authors: Klochikhin, AA Davydov, VY Goncharuk, IN Smirnov, AN Nikolaev, AE Baidakova, MV Aderhold, J Graul, J Stemmer, J Semchinova, O
Citation: Aa. Klochikhin et al., Statistical Ga clusters and A(1)(TO) gap mode in AlxGa1-xN alloys, PHYS REV B, 62(4), 2000, pp. 2522-2535
Misfit dislocations at the GaN/SiC interface and their interaction with point defects
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Theys, B Jomard, F Nikitina, IP Nikolaev, AE Dmitriev, VA
Citation: Ay. Polyakov et al., Misfit dislocations at the GaN/SiC interface and their interaction with point defects, SOL ST ELEC, 44(11), 2000, pp. 1955-1960
Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
Authors: Zubrilov, AS Melnik, YV Nikolaev, AE Jacobson, MA Nelson, DK Dmitriev, VA
Citation: As. Zubrilov et al., Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy, SEMICONDUCT, 33(10), 1999, pp. 1067-1071
Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy
Authors: Foxon, CT Cheng, TS Novikov, SV Jeffs, NJ Hughes, OH Melnik, YV Nikolaev, AE Dmitriev, VA
Citation: Ct. Foxon et al., Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy, SURF SCI, 421(3), 1999, pp. 377-385
Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Mil'vidskii, MG Tsvetkov, DV Stepanov, SI Nikolaev, AE Dmitriev, VA
Citation: Ay. Polyakov et al., Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy, SOL ST ELEC, 43(10), 1999, pp. 1937-1943
GaN/SiC quasi-substrates for GaN-based LEDs
Authors: Schwegler, V Kirchner, C Seyboth, M Kamp, M Ebeling, KJ Melnik, YV Nikolaev, AE Tsvetkov, D Dmitriev, VA
Citation: V. Schwegler et al., GaN/SiC quasi-substrates for GaN-based LEDs, PHYS ST S-A, 176(1), 1999, pp. 99-102
Dislocation reduction in AlN and GaN bulk crystals grown by HVPE
Authors: Albrecht, M Nikitina, IP Nikolaev, AE Melnik, YV Dmitriev, VA Strunk, HP
Citation: M. Albrecht et al., Dislocation reduction in AlN and GaN bulk crystals grown by HVPE, PHYS ST S-A, 176(1), 1999, pp. 453-458
Insulating GaN : Zn layers grown by hydride vapor phase epitaxy on SiC substrates
Authors: Kuznetsov, NI Nikolaev, AE Zubrilov, AS Melnik, YV Dmitriev, VA
Citation: Ni. Kuznetsov et al., Insulating GaN : Zn layers grown by hydride vapor phase epitaxy on SiC substrates, APPL PHYS L, 75(20), 1999, pp. 3138-3140
Risultati: 1-12 |