Citation: R. Nipoti et A. Parisini, Structural characterization of Ar+-ion-amorphized 6H-SiC wafers annealed at 1100 degrees C in N-2 or wet O-2 ambient, PHIL MAG B, 80(4), 2000, pp. 647-659
Authors:
Lulli, G
Albertazzi, E
Bianconi, M
Bentini, GG
Nipoti, R
Lotti, R
Citation: G. Lulli et al., Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra, NUCL INST B, 170(1-2), 2000, pp. 1-9
Authors:
Lulli, G
Albertazzi, E
Bianconi, M
Nipoti, R
Citation: G. Lulli et al., Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC, NUCL INST B, 148(1-4), 1999, pp. 573-577