Authors: Nipoti, R Parisini, A

Citation: R. Nipoti et A. Parisini, Structural characterization of Ar+-ion-amorphized 6H-SiC wafers annealed at 1100 degrees C in N-2 or wet O-2 ambient, PHIL MAG B, 80(4), 2000, pp. 647-659

Authors: Lulli, G Albertazzi, E Bianconi, M Bentini, GG Nipoti, R Lotti, R

Citation: G. Lulli et al., Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra, NUCL INST B, 170(1-2), 2000, pp. 1-9

Authors: Bianconi, M Abel, F Banks, JC Font, AC Cohen, C Doyle, BL Lotti, R Lulli, G Nipoti, R Vickridge, I Walsh, D Wendler, E

Citation: M. Bianconi et al., The Si surface yield as a calibration standard for RBS, NUCL INST B, 161, 2000, pp. 293-296

Authors: Nipoti, R Madrigali, M Sambo, A

Citation: R. Nipoti et al., A study about the wet oxidation of crystalline and ion damaged 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 475-479

Authors: Lulli, G Albertazzi, E Bianconi, M Nipoti, R

Citation: G. Lulli et al., Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC, NUCL INST B, 148(1-4), 1999, pp. 573-577