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Results: 3
Preparation and properties of thick not intentionally doped GaInP(As)/GaAslayers
Authors:
Nohavica, D Gladkov, P Zd'ansky, K
Citation:
D. Nohavica et al., Preparation and properties of thick not intentionally doped GaInP(As)/GaAslayers, NUCL INST A, 434(1), 1999, pp. 164-168
Hydrogen photoevolution on InGaP polycrystalline and tandem-type electrodes
Authors:
Bludska, J Jakubec, I Nohavica, D Pekarek, L
Citation:
J. Bludska et al., Hydrogen photoevolution on InGaP polycrystalline and tandem-type electrodes, CZEC J PHYS, 49(5), 1999, pp. 775-781
Preparation and properties of thick not intentionally doped GaInP(As)/GaAslayers for optoelectronic applications
Authors:
Nohavica, D Gladkov, P Zdansky, K
Citation:
D. Nohavica et al., Preparation and properties of thick not intentionally doped GaInP(As)/GaAslayers for optoelectronic applications, CZEC J PHYS, 49(5), 1999, pp. 797-804
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