Authors: Bertrand, G Delage, C Bafleur, M Nolhier, N Dorkel, JM Nguyen, Q Mauran, N Tremouilles, D Perdu, P

Citation: G. Bertrand et al., Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology, IEEE J SOLI, 36(9), 2001, pp. 1373-1381

Authors: Kassmi, K Nolhier, N Rossel, P Tranduc, H Kouakou, P Gola, P El Hitmy, M Maimouni, R

Citation: K. Kassmi et al., PSPICE model of the power LDMOS transistor for radio frequency applications in the 1.8-2.2 GHz Band, EPJ-APPL PH, 5(2), 1999, pp. 171-178

Authors: Delage, C Nolhier, N Bafleur, M Dorkel, JM Hamid, J Givelin, P Lin-Kwang, J

Citation: C. Delage et al., The mirrored lateral SCR (MILSCR) as an ESD protection structure: Design and optimization using 2-D device simulation, IEEE J SOLI, 34(9), 1999, pp. 1283-1289