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Results: 1-12 |
Results: 12
Scanning capacitance microscopy investigations of SiC structures
Authors: Bowallius, O Anand, S Nordell, N Landgren, G Karlsson, S
Citation: O. Bowallius et al., Scanning capacitance microscopy investigations of SiC structures, MAT SC S PR, 4(1-3), 2001, pp. 209-211
Electric-field-assisted migration and accumulation of hydrogen in silicon carbide
Authors: Janson, MS Hallen, A Linnarsson, MK Svensson, BG Nordell, N Karlsson, S
Citation: Ms. Janson et al., Electric-field-assisted migration and accumulation of hydrogen in silicon carbide, PHYS REV B, 61(11), 2000, pp. 7195-7198
Transient enhanced diffusion of implanted boron in 4H-silicon carbide
Authors: Janson, MS Linnarsson, MK Hallen, A Svensson, BG Nordell, N Bleichner, H
Citation: Ms. Janson et al., Transient enhanced diffusion of implanted boron in 4H-silicon carbide, APPL PHYS L, 76(11), 2000, pp. 1434-1436
B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing
Authors: Valcheva, E Paskova, T Ivanov, IG Yakimova, R Wahab, Q Savage, S Nordell, N Harris, CI
Citation: E. Valcheva et al., B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing, J VAC SCI B, 17(3), 1999, pp. 1040-1044
Equilibrium crystal shapes for 6H AND 4H SiC grown on non-planar substrates
Authors: Nordell, N Karlsson, S Konstantinov, AO
Citation: N. Nordell et al., Equilibrium crystal shapes for 6H AND 4H SiC grown on non-planar substrates, MAT SCI E B, 61-2, 1999, pp. 130-134
Epitaxial growth of SiC in a new multi-wafer VPE reactor
Authors: Karlsson, S Nordell, N Spadafora, F Linnarsson, M
Citation: S. Karlsson et al., Epitaxial growth of SiC in a new multi-wafer VPE reactor, MAT SCI E B, 61-2, 1999, pp. 143-146
Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
Authors: Galeckas, A Linnros, J Frischholz, M Rottner, K Nordell, N Karlsson, S Grivickas, V
Citation: A. Galeckas et al., Investigation of surface recombination and carrier lifetime in 4H/6H-SiC, MAT SCI E B, 61-2, 1999, pp. 239-243
Diffusion of light elements in 4H-and 6H-SiC
Authors: Linnarsson, MK Janson, MS Karlsson, S Schoner, A Nordell, N Svensson, BG
Citation: Mk. Linnarsson et al., Diffusion of light elements in 4H-and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 275-280
Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions
Authors: Kassamakova, L Kakanakov, R Nordell, N Savage, S Kakanakova-Georgieva, A Marinova, T
Citation: L. Kassamakova et al., Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions, MAT SCI E B, 61-2, 1999, pp. 291-295
Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates
Authors: Schoner, A Karlsson, S Schmitt, T Nordell, N Linnarsson, M
Citation: A. Schoner et al., Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates, MAT SCI E B, 61-2, 1999, pp. 389-394
Surface roughening in ion implanted 4H-silicon carbide
Authors: Capano, MA Ryu, S Cooper, JA Melloch, MR Rottner, K Karlsson, S Nordell, N Powell, A Walker, DE
Citation: Ma. Capano et al., Surface roughening in ion implanted 4H-silicon carbide, J ELEC MAT, 28(3), 1999, pp. 214-218
Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures
Authors: Kassamakova, L Kakanakov, RD Kassamakov, IV Nordell, N Savage, S Hjorvarsson, B Svedberg, EB Abom, L Madsen, LD
Citation: L. Kassamakova et al., Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures, IEEE DEVICE, 46(3), 1999, pp. 605-611
Risultati: 1-12 |