Authors: Polyakov, AY Smirnov, NB Govorkov, AV Osinsky, AV Norris, PE Pearton, SJ Van Hove, J Wowchack, AM Chow, RR

Citation: Ay. Polyakov et al., Electronic states in modulation doped p-AlGaN/GaN superlattices, J APPL PHYS, 90(8), 2001, pp. 4032-4038

Authors: Osinsky, AV Fuflyigin, VN Wang, FL Vakhutinsky, PI Norris, PE

Citation: Av. Osinsky et al., Integration of PLZT and BST family oxides with GaN., MRS I J N S, 5, 2000, pp. NIL_105-NIL_110

Authors: Goepfert, ID Schubert, EF Osinsky, R Norris, PE

Citation: Id. Goepfert et al., Efficient acceptor activation in AlxGa1-xN/GaN doped superlattices, MRS I J N S, 5, 2000, pp. NIL_282-NIL_287

Authors: Goepfert, ID Schubert, EF Osinsky, A Norris, PE Faleev, NN

Citation: Id. Goepfert et al., Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1-xN/GaN superlattices, J APPL PHYS, 88(4), 2000, pp. 2030-2038

Authors: Goepfert, ID Schubert, EF Osinsky, A Norris, PE

Citation: Id. Goepfert et al., Demonstration of efficient p-type doping in AlxGa1-xN/GaN superlattice structures, ELECTR LETT, 35(13), 1999, pp. 1109-1111