Authors: Giovine, E Notargiacomo, A Di Gaspare, L Palange, E Evangelisti, F Leoni, R Castellano, G Torrioli, G Foglietti, V

Citation: E. Giovine et al., Investigation of SiGe-heterostructure nanowires, NANOTECHNOL, 12(2), 2001, pp. 132-135

Authors: Giovine, E Cianci, E Foglietti, V Notargiacomo, A Evangelisti, F

Citation: E. Giovine et al., Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etching, MICROEL ENG, 53(1-4), 2000, pp. 217-219

Authors: Cianci, E Foglietti, V Vitali, F Lorenzetti, D Notargiacomo, A Giovine, E

Citation: E. Cianci et al., Micromachined silicon grisms: high resolution spectroscopy in the near infrared, MICROEL ENG, 53(1-4), 2000, pp. 543-546

Authors: Notargiacomo, A Foglietti, V Cianci, E Capellini, G Adami, M Faraci, P Evangelisti, F Nicolini, C

Citation: A. Notargiacomo et al., Atomic force microscopy lithography as a nanodevice development technique, NANOTECHNOL, 10(4), 1999, pp. 458-463

Authors: Capellini, G Di Gaspare, L Evangelisti, F Palange, E Notargiacomo, A Spinella, C Lombardo, S

Citation: G. Capellini et al., Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition, SEMIC SCI T, 14(6), 1999, pp. L21-L23