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Results: 1-25/42
Authors:
Guiot, E
Benayoun, S
Nouet, G
Djouadi, M
Masri, P
Lambertin, M
Citation: E. Guiot et al., Formation and growth of c-BN films in various conditions: improvement of the adherence, DIAM RELAT, 10(3-7), 2001, pp. 1357-1362
Authors:
Iliopoulos, E
Ludwig, KF
Moustakas, TD
Komninou, P
Karakostas, T
Nouet, G
Chu, SNG
Citation: E. Iliopoulos et al., Epitaxial growth and self-organized superlattice structures in AlGaN filmsgrown by plasma assisted molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 227-236
Authors:
Potin, V
Gil, B
Charar, S
Ruterana, P
Nouet, G
Citation: V. Potin et al., HREM study of basal stacking faults in GaN layers grown over sapphire substrate, MAT SCI E B, 82(1-3), 2001, pp. 114-116
Authors:
Chen, J
Ruterana, P
Nouet, G
Citation: J. Chen et al., Multiple atomic configurations of the a edge threading dislocation in GaN, MAT SCI E B, 82(1-3), 2001, pp. 117-119
Authors:
Ruterana, P
Chen, J
Nouet, G
Citation: P. Ruterana et al., The atomic structure and properties of wurtzite GaN epitaxial layers, MAT SCI E B, 82(1-3), 2001, pp. 123-127
Authors:
Ruterana, P
Nouet, G
Citation: P. Ruterana et G. Nouet, Atomic structure of extended defects in wurtzite GaN epitaxial layers, PHYS ST S-B, 227(1), 2001, pp. 177-228
Dynamic stress investigations for cubic boron nitride films deposited by triode sputtering technique
Authors:
Djouadi, MA
Mortet, V
Khandozhko, S
Jouan, PY
Nouet, G
Citation: Ma. Djouadi et al., Dynamic stress investigations for cubic boron nitride films deposited by triode sputtering technique, SURF COAT, 142, 2001, pp. 899-905
Authors:
Kehagias, T
Komninou, P
Nouet, G
Ruterana, P
Karakostas, T
Citation: T. Kehagias et al., Misfit relaxation of the AlN/Al2O3 (0001) interface - art. no. 195329, PHYS REV B, 6419(19), 2001, pp. 5329
Authors:
Kho, JG
Moon, KT
Nouet, G
Ruterana, P
Kim, DP
Citation: Jg. Kho et al., Boron-rich boron nitride (BN) films prepared by a single spin-coating process of a polymeric precursor, THIN SOL FI, 389(1-2), 2001, pp. 78-83
Authors:
Sanchez, AM
Nouet, G
Ruterana, P
Pacheco, FJ
Molina, SI
Garcia, R
Citation: Am. Sanchez et al., A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111), APPL PHYS L, 79(22), 2001, pp. 3588-3590
Authors:
Ruterana, P
Potin, V
Barbaray, B
Nouet, G
Citation: P. Ruterana et al., Growth defects in GaN layers on top of (0001) sapphire: a geometrical investigation of the misfit effect, PHIL MAG A, 80(4), 2000, pp. 937-954
Authors:
Potin, V
Ruterana, P
Nouet, G
Pond, RC
Morkoc, H
Citation: V. Potin et al., Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle tohigh-angle grain boundaries, PHYS REV B, 61(8), 2000, pp. 5587-5599
Authors:
Ruterana, P
Bere, A
Nouet, G
Citation: P. Ruterana et al., Formation and stability of the prismatic stacking faultin wurtzite (Al,Ga,In) nitrides, MRS I J N S, 5, 2000, pp. NIL_228-NIL_233
Authors:
Ruterana, P
Nouet, G
Kehagias, T
Komninou, P
Karakostas, T
Poisson, MAD
Huet, F
Citation: P. Ruterana et al., The microstructure and electrical properties of directly deposited TiN ohmic contacts to gallium nitride., MRS I J N S, 5, 2000, pp. NIL_762-NIL_767
Authors:
Frantz-Rodriguez, N
Bosseboeuf, A
Dufour-Gergam, E
Stambouli-Sene, V
Nouet, G
Seiler, W
Lebrun, JL
Citation: N. Frantz-rodriguez et al., Composition and structure of NiTiCu shape memory thin films, J MICROM M, 10(2), 2000, pp. 147-151
Authors:
Ruterana, P
Chen, J
Potin, V
Nouet, G
Citation: P. Ruterana et al., The multiple atomic configuration and formation mechanisms of extended defects in wurtzite GaN, J PHYS-COND, 12(49), 2000, pp. 10185-10194
Authors:
Kret, S
Ruterana, P
Nouet, G
Citation: S. Kret et al., Analysis of strain in the {11(2)over-bar-0} prismatic fault in GaN using digital processing of high-resolution transmission electron microscopy images, J PHYS-COND, 12(49), 2000, pp. 10249-10256
Authors:
Komninou, P
Dimitrakopulos, GP
Nouet, G
Kehagias, T
Ruterana, P
Karakostas, T
Citation: P. Komninou et al., Interfacial dislocations in TiN/GaN thin films, J PHYS-COND, 12(49), 2000, pp. 10295-10300
Authors:
Potin, V
Ruterana, P
Nouet, G
Citation: V. Potin et al., HREM study of stacking faults in GaN layers grown over sapphire substrate, J PHYS-COND, 12(49), 2000, pp. 10301-10306
Authors:
Degave, F
Ruterana, P
Nouet, G
Citation: F. Degave et al., Microstructure of GaN epitaxial films grown on (0001) sapphire by chemicalbeam epitaxy as related to buffer growth conditions, J PHYS-COND, 12(49), 2000, pp. 10307-10312
Authors:
Bere, A
Chen, J
Hairie, A
Nouet, G
Paumier, E
Citation: A. Bere et al., Determination of the high c/a ratio of hexagonal metals with a semi-empirical tight-binding method, COMP MAT SC, 17(2-4), 2000, pp. 249-254
Authors:
Aichoune, N
Potin, V
Ruterana, P
Hairie, A
Nouet, G
Paumier, E
Citation: N. Aichoune et al., An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN, COMP MAT SC, 17(2-4), 2000, pp. 380-383
Authors:
Komninou, P
Nouet, G
Patsalas, P
Kehagias, T
Gioti, M
Logothetidis, S
Karakostas, T
Citation: P. Komninou et al., Crystalline structures of carbon complexes in amorphous carbon films, DIAM RELAT, 9(3-6), 2000, pp. 703-706
Authors:
Ilias, S
Stambouli, V
Bouchier, D
Nouet, G
Citation: S. Ilias et al., Study of stress and infra-red absorption line of BN films containing various fractions of cubic phase, DIAM RELAT, 9(11), 2000, pp. 1867-1875
Authors:
Lebouvier, B
Hairie, A
Nouet, G
Paumier, E
Citation: B. Lebouvier et al., Analysis of distortions in < 110 > tilt silicon bicrystals, PHYS ST S-B, 220(2), 2000, pp. 811-819