Citation: N. Novkovski, Comparison of the dynamic stress breakdown between oxide and oxy-nitride thin films on silicon, PHYS ST S-A, 182(2), 2000, pp. R8-R9
Authors:
Novkovski, N
Pecovska-Gjorgjevich, M
Atanassova, E
Dimitrova, T
Citation: N. Novkovski et al., Stress degradation of low field leakage in alumina gate MOS structures containing RF magnetron sputtered thin Ta2O5 films on silicon, PHYS ST S-A, 172(2), 1999, pp. R9-R10