Authors: NAKADA A KANEMOTO K OKA MM TAMAI Y OHMI T

Citation: A. Nakada et al., INFLUENCE OF FLUORINE IN BF2-LEAKAGE SILICON P(+)N JUNCTIONS BY 450-500-DEGREES-C ANNEALING( IMPLANTATION ON THE FORMATION OF ULTRASHALLOW AND LOW), Journal of applied physics, 81(6), 1997, pp. 2560-2565

Authors: AHARONI H OHMI T OKA MM NAKADA A TAMAI Y

Citation: H. Aharoni et al., ANALYSIS OF N(+)P SILICON JUNCTIONS WITH VARYING SUBSTRATE DOPING CONCENTRATIONS MADE UNDER ULTRACLEAN PROCESSING TECHNOLOGY, Journal of applied physics, 81(3), 1997, pp. 1270-1288

Authors: AHARONI H OHMI T SHIBATA T OKA MM NAKADA A TAMAI Y

Citation: H. Aharoni et al., A COMPARATIVE-EXAMINATION OF ION-IMPLANTED N(-DEGREES-C AND 450-DEGREES-C()P JUNCTIONS ANNEALED AT 1000), JPN J A P 1, 35(9A), 1996, pp. 4606-4617

Authors: NAKADA A OKA MM TAMAI Y SHIBATA T OHMI T

Citation: A. Nakada et al., INFLUENCE OF SUBSTRATE-BORON CONCENTRATION ON THE RESIDUAL END-OF-RANGE DEFECTS IN 450 DEGREES-C ANNEALED AS-IMPLANTED JUNCTIONS(), Journal of applied physics, 80(3), 1996, pp. 1594-1599

Authors: OKA MM NAKADA A TOMITA K SHIBATA T OHMI T NITTA T

Citation: Mm. Oka et al., REDUCING REVERSE-BIAS CURRENT IN 450-DEGREES-C-ANNEALED N(+)P JUNCTION BY HYDROGEN RADICAL SINTERING, JPN J A P 1, 34(2B), 1995, pp. 796-799