ACNP - Italian Periodicals Catalogue

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Results: 1-17 |

Results: 17

DEFECTS AND INTERFACES IN EPITAXIAL ZNO ALPHA-AL2O3 AND ALN/ZNO/ALPHA-AL2O3, HETEROSTRUCTURES/

Authors: NARAYAN J DOVIDENKO K SHARMA AK OKTYABRSKY S

Citation: J. Narayan et al., DEFECTS AND INTERFACES IN EPITAXIAL ZNO ALPHA-AL2O3 AND ALN/ZNO/ALPHA-AL2O3, HETEROSTRUCTURES/, Journal of applied physics, 84(5), 1998, pp. 2597-2601

ROLE OF SILVER DOPING IN OXYGEN INCORPORATION OF OXIDE THIN-FILM

Authors: KUMAR D OKTYABRSKY S KALYANARAMAN R NARAYAN J APTE PR PINTO R MANOHARAN SS HEGDE MS OGALE SB ADHI KP

Citation: D. Kumar et al., ROLE OF SILVER DOPING IN OXYGEN INCORPORATION OF OXIDE THIN-FILM, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 55-58

ELECTRICAL AND MICROSTRUCTURAL CHARACTERISTICS OF GE CU OHMIC CONTACTS TO N-TYPE GAAS/

Authors: ABOELFOTOH MO OKTYABRSKY S NARAYAN J WOODALL JM

Citation: Mo. Aboelfotoh et al., ELECTRICAL AND MICROSTRUCTURAL CHARACTERISTICS OF GE CU OHMIC CONTACTS TO N-TYPE GAAS/, Journal of materials research, 12(9), 1997, pp. 2325-2331

CHARACTERISTICS OF STACKING-FAULTS IN ALN THIN-FILMS

Authors: DOVIDENKO K OKTYABRSKY S NARAYAN J

Citation: K. Dovidenko et al., CHARACTERISTICS OF STACKING-FAULTS IN ALN THIN-FILMS, Journal of applied physics, 82(9), 1997, pp. 4296-4299

INFLUENCE OF OXYGEN BACKGROUND PRESSURE ON CRYSTALLINE QUALITY OF SRTIO3 FILMS GROWN ON MGO BY PULSED-LASER DEPOSITION

Authors: KALYANARAMAN R VISPUTE RD OKTYABRSKY S DOVIDENKO K JAGANNADHAM K NARAYAN J BUDAI JD PARIKH N SUVKHANOV A

Citation: R. Kalyanaraman et al., INFLUENCE OF OXYGEN BACKGROUND PRESSURE ON CRYSTALLINE QUALITY OF SRTIO3 FILMS GROWN ON MGO BY PULSED-LASER DEPOSITION, Applied physics letters, 71(12), 1997, pp. 1709-1711

DIAMOND DEPOSITION ON 3D TRANSITION-METALS AND THEIR ALLOYS

Authors: NARAYAN J NELSON M OKTYABRSKY S JAGANNADHAM K

Citation: J. Narayan et al., DIAMOND DEPOSITION ON 3D TRANSITION-METALS AND THEIR ALLOYS, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 46-52

CHARACTERIZATION OF HIGHLY ORIENTED (110) TIN FILMS GROWN ON EPITAXIAL GE SI(001) HETEROSTRUCTURES/

Authors: ZHELEVA T OKTYABRSKY S JAGANNADHAM K VISPUTE RD NARAYAN J

Citation: T. Zheleva et al., CHARACTERIZATION OF HIGHLY ORIENTED (110) TIN FILMS GROWN ON EPITAXIAL GE SI(001) HETEROSTRUCTURES/, Journal of materials research, 11(2), 1996, pp. 399-411

CU3GE OHMIC CONTACTS TO N-TYPE GAAS

Authors: OKTYABRSKY S ABOELFOTOH MO NARAYAN J WOODALL JM

Citation: S. Oktyabrsky et al., CU3GE OHMIC CONTACTS TO N-TYPE GAAS, Journal of electronic materials, 25(11), 1996, pp. 1662-1672

MICROSTRUCTURE AND CHEMISTRY OF CU-GE OHMIC CONTACT LAYERS TO GAAS

Authors: OKTYABRSKY S ABOELFOTOH MO NARAYAN J

Citation: S. Oktyabrsky et al., MICROSTRUCTURE AND CHEMISTRY OF CU-GE OHMIC CONTACT LAYERS TO GAAS, Journal of electronic materials, 25(11), 1996, pp. 1673-1683

LANIO3 AND CU3GE CONTACTS TO YBA2CU3O7-X FILMS

Authors: KUMAR D VISPUTE RD ABOELFOTOH O OKTYABRSKY S JAGANNADHAM K NARAYAN J APTE PR PINTO R

Citation: D. Kumar et al., LANIO3 AND CU3GE CONTACTS TO YBA2CU3O7-X FILMS, Journal of electronic materials, 25(11), 1996, pp. 1760-1766

HIGH-RESOLUTION PL CHARACTERIZATION OF IMPURITY SEGREGATION AND THEIRCOMPLEX-FORMATION ON EXTENDED DEFECTS IN CDTE

Authors: GUKASYAN A KVIT A KLEVKOV Y OKTYABRSKY S

Citation: A. Gukasyan et al., HIGH-RESOLUTION PL CHARACTERIZATION OF IMPURITY SEGREGATION AND THEIRCOMPLEX-FORMATION ON EXTENDED DEFECTS IN CDTE, Solid state communications, 97(10), 1996, pp. 897-902

ALUMINUM NITRIDE FILMS ON DIFFERENT ORIENTATIONS OF SAPPHIRE AND SILICON

Authors: DOVIDENKO K OKTYABRSKY S NARAYAN J RAZEGHI M

Citation: K. Dovidenko et al., ALUMINUM NITRIDE FILMS ON DIFFERENT ORIENTATIONS OF SAPPHIRE AND SILICON, Journal of applied physics, 79(5), 1996, pp. 2439-2445

LOW-RESISTIVITY COPPER GERMANIDE ON (100)SI FOR CONTACTS AND INTERCONNECTIONS

Authors: BOREK MA OKTYABRSKY S ABOELFOTOH MO NARAYAN J

Citation: Ma. Borek et al., LOW-RESISTIVITY COPPER GERMANIDE ON (100)SI FOR CONTACTS AND INTERCONNECTIONS, Applied physics letters, 69(23), 1996, pp. 3560-3562

NEW MECHANISM OF FORMATION OF STACKING-FAULTS IN GE (001)SI HETEROSTRUCTURES/

Authors: OKTYABRSKY S NARAYAN J

Citation: S. Oktyabrsky et J. Narayan, NEW MECHANISM OF FORMATION OF STACKING-FAULTS IN GE (001)SI HETEROSTRUCTURES/, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 72(2), 1995, pp. 305-314

MISFIT DISLOCATIONS IN LOW-TEMPERATURE-GROWN GE SI HETEROSTRUCTURES

Authors: OKTYABRSKY S WU H VISPUTE RD NARAYAN J

Citation: S. Oktyabrsky et al., MISFIT DISLOCATIONS IN LOW-TEMPERATURE-GROWN GE SI HETEROSTRUCTURES, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 71(3), 1995, pp. 537-551

BIAXIAL COMPRESSION IN GAAS THIN-FILMS GROWN ON SI

Authors: JOSHKIN V ORLIKOVSKY A OKTYABRSKY S DOVIDENKO K KVIT A MUHAMEDZANOV I PASHAEV E

Citation: V. Joshkin et al., BIAXIAL COMPRESSION IN GAAS THIN-FILMS GROWN ON SI, Journal of crystal growth, 147(1-2), 1995, pp. 13-18

MICROSTRUCTURE CHARACTERIZATION OF CU3GE N-TYPE GAAS OHMIC CONTACTS

Authors: ABOELFOTOH MO OKTYABRSKY S NARAYAN J WOODALL JM

Citation: Mo. Aboelfotoh et al., MICROSTRUCTURE CHARACTERIZATION OF CU3GE N-TYPE GAAS OHMIC CONTACTS, Journal of applied physics, 76(10), 1994, pp. 5760-5763

Risultati: 1-17 |