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Citation: H. Wang et al., SUPPRESSION OF I-V KINK IN DOPED CHANNEL INALAS INGAAS/INP HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET) USING SILICON-NITRIDE PASSIVATION/, Electronics Letters, 32(21), 1996, pp. 2026-2027

Authors: OSULLIVAN PJ ALLAN DA BIRDSALL P GILBERT MJ

Citation: Pj. Osullivan et al., SELECTIVE-AREA EPITAXY FOR GAAS-ON-INP OPTOELECTRONIC INTEGRATED-CIRCUITS (OEICS), Semiconductor science and technology, 8(6), 1993, pp. 1179-1185

Authors: OSULLIVAN PJ

Citation: Pj. Osullivan, AN ASSESSMENT OF IRELAND EXPORT-LED GROWTH STRATEGY VIA FOREIGN DIRECT-INVESTMENT - 1960-1980, Weltwirtschaftliches Archiv, 129(1), 1993, pp. 139-158

Authors: WOOLNOUGH PN BIRDSALL P OSULLIVAN PJ COCKBURN AJ HARLOW MJ

Citation: Pn. Woolnough et al., FABRICATION OF A 4-CHANNEL DFB LASER TRANSMITTER OEIC FOR 1550 NM OPERATION, Electronics Letters, 29(15), 1993, pp. 1388-1390