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Results: 1-20 |
Results: 20
Convex corner undercutting of {100} silicon in anisotropic KOH etching: The new step-flow model of 3-D structuring and first simulation results
Authors: Schroder, H Obermeier, E Horn, A Wachutka, GKM
Citation: H. Schroder et al., Convex corner undercutting of {100} silicon in anisotropic KOH etching: The new step-flow model of 3-D structuring and first simulation results, J MICROEL S, 10(1), 2001, pp. 88-97
Enhancement of NO2 sensing properties of In2O3-based thin films using an Au or Ti surface modification
Authors: Steffes, H Imawan, C Solzbacher, F Obermeier, E
Citation: H. Steffes et al., Enhancement of NO2 sensing properties of In2O3-based thin films using an Au or Ti surface modification, SENS ACTU-B, 78(1-3), 2001, pp. 106-112
A new preparation method for sputtered MoO3 multilayers for the application in gas sensors
Authors: Imawan, C Steffes, H Solzbacher, F Obermeier, E
Citation: C. Imawan et al., A new preparation method for sputtered MoO3 multilayers for the application in gas sensors, SENS ACTU-B, 78(1-3), 2001, pp. 119-125
A highly stable SiC based microhotplate NO2 gas-sensor
Authors: Solzbacher, F Imawan, C Steffes, H Obermeier, E Eickhoff, M
Citation: F. Solzbacher et al., A highly stable SiC based microhotplate NO2 gas-sensor, SENS ACTU-B, 78(1-3), 2001, pp. 216-220
A new SiC/HfB2 based low power gas sensor
Authors: Solzbacher, F Imawan, C Steffes, H Obermeier, E Eickhoff, M
Citation: F. Solzbacher et al., A new SiC/HfB2 based low power gas sensor, SENS ACTU-B, 77(1-2), 2001, pp. 111-115
Structural and gas-sensing properties of V2O5-MoO3 thin films for H-2 detection
Authors: Imawan, C Steffes, H Solzbacher, F Obermeier, E
Citation: C. Imawan et al., Structural and gas-sensing properties of V2O5-MoO3 thin films for H-2 detection, SENS ACTU-B, 77(1-2), 2001, pp. 346-351
New InxOyNz films for the application in NO2 sensors
Authors: Steffes, H Imawan, C Fricke, P Vohse, H Albrecht, J Schneider, R Solzbacher, F Obermeier, E
Citation: H. Steffes et al., New InxOyNz films for the application in NO2 sensors, SENS ACTU-B, 77(1-2), 2001, pp. 352-358
Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates
Authors: Strittmatter, A Rodt, S Reissmann, L Bimberg, D Schroder, H Obermeier, E Riemann, T Christen, J Krost, A
Citation: A. Strittmatter et al., Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates, APPL PHYS L, 78(6), 2001, pp. 727-729
A new model for Si-{100} convex corner undercutting in anisotropic KOH etching
Authors: Schroder, H Obermeier, E
Citation: H. Schroder et E. Obermeier, A new model for Si-{100} convex corner undercutting in anisotropic KOH etching, J MICROM M, 10(2), 2000, pp. 163-170
Microactuators and their technologies
Authors: Thielicke, E Obermeier, E
Citation: E. Thielicke et E. Obermeier, Microactuators and their technologies, MECHATRONIC, 10(4-5), 2000, pp. 431-455
TiOx-modified NiO thin films for H-2 gas sensors: effects of TiOx-overlayer sputtering parameters
Authors: Imawan, C Solzbacher, F Steffes, H Obermeier, E
Citation: C. Imawan et al., TiOx-modified NiO thin films for H-2 gas sensors: effects of TiOx-overlayer sputtering parameters, SENS ACTU-B, 68(1-3), 2000, pp. 184-188
Fabrication parameters and NO2 sensitivity of reactively RF-sputtered In2O3 thin films
Authors: Steffes, H Imawan, C Solzbacher, F Obermeier, E
Citation: H. Steffes et al., Fabrication parameters and NO2 sensitivity of reactively RF-sputtered In2O3 thin films, SENS ACTU-B, 68(1-3), 2000, pp. 249-253
A modular system of SiC-based microhotplates for the application in metal oxide gas sensors
Authors: Solzbacher, F Imawan, C Steffes, H Obermeier, E Moller, H
Citation: F. Solzbacher et al., A modular system of SiC-based microhotplates for the application in metal oxide gas sensors, SENS ACTU-B, 64(1-3), 2000, pp. 95-101
Gas-sensing characteristics of modified-MoO3 thin films using Ti-overlayers for NH3 gas sensors
Authors: Imawan, C Solzbacher, F Steffes, H Obermeier, E
Citation: C. Imawan et al., Gas-sensing characteristics of modified-MoO3 thin films using Ti-overlayers for NH3 gas sensors, SENS ACTU-B, 64(1-3), 2000, pp. 193-197
The effects of thermal treatment on the anisotropic etching behavior of Cz- and Fz-silicon
Authors: Hein, A Finkbeiner, S Marek, J Obermeier, E
Citation: A. Hein et al., The effects of thermal treatment on the anisotropic etching behavior of Cz- and Fz-silicon, SENS ACTU-A, 86(1-2), 2000, pp. 86-90
Micro-coil with movable core for application in an inductive displacement sensor
Authors: Velten, T Stefan, D Obermeier, E
Citation: T. Velten et al., Micro-coil with movable core for application in an inductive displacement sensor, J MICROM M, 9(2), 1999, pp. 119-122
Micropyramidal hillocks on KOH etched {100} silicon surfaces: formation, prevention and removal
Authors: Schroder, H Obermeier, E Steckenborn, A
Citation: H. Schroder et al., Micropyramidal hillocks on KOH etched {100} silicon surfaces: formation, prevention and removal, J MICROM M, 9(2), 1999, pp. 139-145
Heteroepitaxial growth of 3C-SiC on SOI for sensor applications
Authors: Krotz, G Moller, H Eickhoff, M Zappe, S Ziermann, R Obermeier, E Stoemenos, J
Citation: G. Krotz et al., Heteroepitaxial growth of 3C-SiC on SOI for sensor applications, MAT SCI E B, 61-2, 1999, pp. 516-521
Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer
Authors: Zappe, S Obermeier, E Stoemenos, J Moller, H Krotz, G Wirth, H Skorupa, W
Citation: S. Zappe et al., Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer, MAT SCI E B, 61-2, 1999, pp. 522-525
High temperature piezoresistive beta-SiC-on-SOI pressure sensor with on chip SiC thermistor
Authors: Ziermann, R von Berg, J Obermeier, E Wischmeyer, F Niemann, E Moller, H Eickhoff, M Krotz, G
Citation: R. Ziermann et al., High temperature piezoresistive beta-SiC-on-SOI pressure sensor with on chip SiC thermistor, MAT SCI E B, 61-2, 1999, pp. 576-578
Risultati: 1-20 |