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Results: 1-25 | 26-26
Results: 1-25/26
Gas-phase studies in inductively coupled fluorocarbon plasmas
Authors: Schaepkens, M Martini, I Sanjuan, EA Li, X Oehrlein, GS Perry, WL Anderson, HM
Citation: M. Schaepkens et al., Gas-phase studies in inductively coupled fluorocarbon plasmas, J VAC SCI A, 19(6), 2001, pp. 2946-2957
High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)
Authors: Standaert, TEFM Matsuo, PJ Li, X Oehrlein, GS Lu, TM Gutmann, R Rosenmayer, CT Bartz, JW Langan, JG Entley, WR
Citation: Tefm. Standaert et al., High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether), J VAC SCI A, 19(2), 2001, pp. 435-446
Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas
Authors: Kastenmeier, BEE Matsuo, PJ Oehrlein, GS Ellefson, RE Frees, LC
Citation: Bee. Kastenmeier et al., Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas, J VAC SCI A, 19(1), 2001, pp. 25-30
Surface chemistry studies of copper chemical mechanical planarization
Authors: Hernandez, J Wrschka, P Oehrlein, GS
Citation: J. Hernandez et al., Surface chemistry studies of copper chemical mechanical planarization, J ELCHEM SO, 148(7), 2001, pp. G389-G397
Development of a slurry employing a unique silica abrasive for the CMP of Cu Damascene structures
Authors: Wrschka, P Hernandez, J Oehrlein, GS Negrych, JA Haag, G Rau, P Currie, JE
Citation: P. Wrschka et al., Development of a slurry employing a unique silica abrasive for the CMP of Cu Damascene structures, J ELCHEM SO, 148(6), 2001, pp. G321-G325
A review of SiO2 etching studies in inductively coupled fluorocarbon plasmas
Authors: Schaepkens, M Oehrlein, GS
Citation: M. Schaepkens et Gs. Oehrlein, A review of SiO2 etching studies in inductively coupled fluorocarbon plasmas, J ELCHEM SO, 148(3), 2001, pp. C211-C221
Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas
Authors: Schaepkens, M Oehrlein, GS Cook, JM
Citation: M. Schaepkens et al., Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas, J VAC SCI B, 18(2), 2000, pp. 848-855
Effects of radio frequency bias frequency and radio frequency bias pulsingon SiO2 feature etching in inductively coupled fluorocarbon plasmas
Authors: Schaepkens, N Oehrlein, GS Cook, JM
Citation: N. Schaepkens et al., Effects of radio frequency bias frequency and radio frequency bias pulsingon SiO2 feature etching in inductively coupled fluorocarbon plasmas, J VAC SCI B, 18(2), 2000, pp. 856-863
Etching of xerogel in high-density fluorocarbon plasmas
Authors: Standaert, TEFM Joseph, EA Oehrlein, GS Jain, A Gill, WN Wayner, PC Plawsky, JL
Citation: Tefm. Standaert et al., Etching of xerogel in high-density fluorocarbon plasmas, J VAC SCI A, 18(6), 2000, pp. 2742-2748
Gas utilization in remote plasma cleaning and stripping applications
Authors: Kastenmeier, BEE Oehrlein, GS Langan, JG Entley, WR
Citation: Bee. Kastenmeier et al., Gas utilization in remote plasma cleaning and stripping applications, J VAC SCI A, 18(5), 2000, pp. 2102-2107
Using a quartz crystal microbalance for low energy ion beam etching studies
Authors: Doemling, MF Lin, B Rueger, NR Oehrlein, GS Haring, RA Lee, YH
Citation: Mf. Doemling et al., Using a quartz crystal microbalance for low energy ion beam etching studies, J VAC SCI A, 18(1), 2000, pp. 232-236
Pattern transfer into low dielectric constant materials by high-density plasma etching
Authors: Oehrlein, GS Standaert, TEFM Matsuo, PJ
Citation: Gs. Oehrlein et al., Pattern transfer into low dielectric constant materials by high-density plasma etching, SOL ST TECH, 43(5), 2000, pp. 125
Chemical mechanical planarization of copper damascene structures
Authors: Wrschka, P Hernandez, J Oehrlein, GS King, J
Citation: P. Wrschka et al., Chemical mechanical planarization of copper damascene structures, J ELCHEM SO, 147(2), 2000, pp. 706-712
Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch
Authors: Matsuo, PJ Standaert, TEFM Allen, SD Oehrlein, GS Dalton, TJ
Citation: Pj. Matsuo et al., Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch, J VAC SCI B, 17(4), 1999, pp. 1435-1447
Highly selective etching of silicon nitride over silicon and silicon dioxide
Authors: Kastenmeier, BEE Matsuo, PJ Oehrlein, GS
Citation: Bee. Kastenmeier et al., Highly selective etching of silicon nitride over silicon and silicon dioxide, J VAC SCI A, 17(6), 1999, pp. 3179-3184
Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing
Authors: Schaepkens, M Rueger, NR Beulens, JJ Li, X Standaert, TEFM Matsuo, PJ Oehrlein, GS
Citation: M. Schaepkens et al., Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing, J VAC SCI A, 17(6), 1999, pp. 3272-3280
Silicon etching in NF3/O-2 remote microwave plasmas
Authors: Matsuo, PJ Kastenmeier, BEE Oehrlein, GS Langan, JG
Citation: Pj. Matsuo et al., Silicon etching in NF3/O-2 remote microwave plasmas, J VAC SCI A, 17(5), 1999, pp. 2431-2437
Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection
Authors: Li, X Schaepkens, M Oehrlein, GS Ellefson, RE Frees, LC Mueller, N Korner, N
Citation: X. Li et al., Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection, J VAC SCI A, 17(5), 1999, pp. 2438-2446
Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor
Authors: Rueger, NR Doemling, MF Schaepkens, M Beulens, JJ Standaert, TEFM Oehrlein, GS
Citation: Nr. Rueger et al., Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor, J VAC SCI A, 17(5), 1999, pp. 2492-2502
Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2
Authors: Standaert, TEFM Matsuo, PJ Allen, SD Oehrlein, GS Dalton, TJ
Citation: Tefm. Standaert et al., Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2, J VAC SCI A, 17(3), 1999, pp. 741-748
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
Authors: Schaepkens, M Standaert, TEFM Rueger, NR Sebel, PGM Oehrlein, GS Cook, JM
Citation: M. Schaepkens et al., Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism, J VAC SCI A, 17(1), 1999, pp. 26-37
Surface science issues in plasma etching
Authors: Oehrlein, GS Doemling, MF Kastenmeier, BEE Matsuo, PJ Rueger, NR Schaepkens, M Standaert, TEFM
Citation: Gs. Oehrlein et al., Surface science issues in plasma etching, IBM J RES, 43(1-2), 1999, pp. 181-197
Polishing parameter dependencies and surface oxidation of chemical mechanical polishing of Al thin films
Authors: Wrschka, P Hernandez, J Hsu, Y Kuan, TS Oehrlein, GS Sun, HJ Hansen, DA King, J Fury, MA
Citation: P. Wrschka et al., Polishing parameter dependencies and surface oxidation of chemical mechanical polishing of Al thin films, J ELCHEM SO, 146(7), 1999, pp. 2689-2696
Chemical mechanical polishing of Al and SiO2 thin films: The role of consumables
Authors: Hernandez, J Wrschka, P Hsu, Y Kuan, TS Oehrlein, GS Sun, HJ Hansen, DA King, J Fury, MA
Citation: J. Hernandez et al., Chemical mechanical polishing of Al and SiO2 thin films: The role of consumables, J ELCHEM SO, 146(12), 1999, pp. 4647-4653
Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching
Authors: Hsu, Y Standaert, TEFM Oehrlein, GS Kuan, TS Sayre, E Rose, K Lee, KY Rossnagel, SM
Citation: Y. Hsu et al., Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching, J VAC SCI B, 16(6), 1998, pp. 3344-3348
Risultati: 1-25 | 26-26