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Citation: K. Mochizuki et al., Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors, ELECTR LETT, 37(4), 2001, pp. 252-253

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Citation: T. Tanimoto et al., Linearity study on enhance/depletion dual-gate high electron mobility transitors using gain mapping method, JPN J A P 1, 38(7A), 1999, pp. 3972-3975

Authors: Tanimoto, T Ohbu, I Ohta, H Takatani, S

Citation: T. Tanimoto et al., Reduction of Schottky reverse leakage current using GaAs surface cleaning with UVO3 treatment, JPN J A P 1, 38(7A), 1999, pp. 3982-3985