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Results: 1-25 | 26-38 |
Results: 26-38/38
Polarization field determination in AlGaN/GaN HFETs
Authors: Garrido, JA Jimenez, A Sanchez-Rojas, JL Munoz, E Omnes, F Gibart, P
Citation: Ja. Garrido et al., Polarization field determination in AlGaN/GaN HFETs, PHYS ST S-A, 176(1), 1999, pp. 195-199
Spectroscopic studies of InGaN ternary alloys
Authors: Schenk, HPD de Mierry, P Omnes, F Gibart, P
Citation: Hpd. Schenk et al., Spectroscopic studies of InGaN ternary alloys, PHYS ST S-A, 176(1), 1999, pp. 307-311
Prism coupling technique for optical characterization of LP-MOVPE AlxGa1-xN thin film waveguides
Authors: Dogheche, E Belgacem, B Remiens, D Ruterana, P Omnes, F
Citation: E. Dogheche et al., Prism coupling technique for optical characterization of LP-MOVPE AlxGa1-xN thin film waveguides, PHYS ST S-A, 176(1), 1999, pp. 347-350
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
Authors: Omnes, F Marenco, N Beaumont, B de Mierry, P Monroy, E Calle, F Munoz, E
Citation: F. Omnes et al., Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications, J APPL PHYS, 86(9), 1999, pp. 5286-5292
Nanoindentation on AlGaN thin films
Authors: Caceres, D Vergara, I Gonzalez, R Monroy, E Calle, F Munoz, E Omnes, F
Citation: D. Caceres et al., Nanoindentation on AlGaN thin films, J APPL PHYS, 86(12), 1999, pp. 6773-6778
Low noise AlGaN metal-semiconductor-metal photodiodes
Authors: Monroy, E Calle, F Munoz, E Omnes, F Gibart, P
Citation: E. Monroy et al., Low noise AlGaN metal-semiconductor-metal photodiodes, ELECTR LETT, 35(3), 1999, pp. 240-241
High UV/visible contrast photodiodes based on epitaxial lateral overgrown GaN layers
Authors: Monroy, E Calle, F Munoz, E Beaumont, B Omnes, F Gibart, P
Citation: E. Monroy et al., High UV/visible contrast photodiodes based on epitaxial lateral overgrown GaN layers, ELECTR LETT, 35(17), 1999, pp. 1488-1489
Interface properties of AlxGa1-xN/AlN heterostructures from optical waveguiding information
Authors: Dogheche, E Belgacem, B Remiens, D Ruterana, P Omnes, F
Citation: E. Dogheche et al., Interface properties of AlxGa1-xN/AlN heterostructures from optical waveguiding information, APPL PHYS L, 75(21), 1999, pp. 3324-3326
Indium incorporation above 800 degrees C during metalorganic vapor phase epitaxy of InGaN
Authors: Schenk, HPD de Mierry, P Laugt, M Omnes, F Leroux, M Beaumont, B Gibart, P
Citation: Hpd. Schenk et al., Indium incorporation above 800 degrees C during metalorganic vapor phase epitaxy of InGaN, APPL PHYS L, 75(17), 1999, pp. 2587-2589
Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
Authors: Garrido, JA Sanchez-Rojas, JL Jimenez, A Munoz, E Omnes, F Gibart, P
Citation: Ja. Garrido et al., Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis, APPL PHYS L, 75(16), 1999, pp. 2407-2409
Optical properties of low-pressure metalorganic vapor phase epitaxy AlxGa1-xN thin-film waveguides by prism coupling technique
Authors: Dogheche, E Remiens, D Omnes, F
Citation: E. Dogheche et al., Optical properties of low-pressure metalorganic vapor phase epitaxy AlxGa1-xN thin-film waveguides by prism coupling technique, APPL PHYS L, 74(26), 1999, pp. 3960-3962
AlGaN metal-semiconductor-metal photodiodes
Authors: Monroy, E Calle, F Munoz, E Omnes, F
Citation: E. Monroy et al., AlGaN metal-semiconductor-metal photodiodes, APPL PHYS L, 74(22), 1999, pp. 3401-3403
The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy
Authors: Haffouz, S Lahreche, H Vennegues, P de Mierry, P Beaumont, B Omnes, F Gibart, P
Citation: S. Haffouz et al., The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy, APPL PHYS L, 73(9), 1998, pp. 1278-1280
Risultati: 1-25 | 26-38 |